Abstract
Scanning tunneling microscopy (STM) and x-ray photoelectron spectroscopy (XPS) were used to observe the formation of metastable (6×6)-Si nanoclusters (diameter ∼16.5±0.1 A) on 6H–SiC(0001)-(3×3) surface. STM and XPS data suggest that these clusters are derived from the ejection of the Si-tetracluster unit of the initial (3×3) reconstruction at elevated temperatures and occur in a less Si-rich environment than the initial surface. The observed surface restructuring is related to the reconfiguration of coplanar Si bonds within the (3×3) unit cell. The occurrence of these regularly sized “magic” clusters demonstrates the potential of nanostructure formation of Si on SiC.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 10:24 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 5:11 p.m.) |
Indexed | 1 year, 5 months ago (March 16, 2024, 1:05 a.m.) |
Issued | 23 years, 3 months ago (May 6, 2002) |
Published | 23 years, 3 months ago (May 6, 2002) |
Published Print | 23 years, 3 months ago (May 6, 2002) |
@article{Ong_2002, title={Self-assembly of Si nanoclusters on 6H–SiC(0001)-(3×3) reconstructed surface}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1476398}, DOI={10.1063/1.1476398}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ong, W. J. and Tok, E. S. and Xu, H. and Wee, A. T. S.}, year={2002}, month=may, pages={3406–3408} }