DOI: 10.1063/1.1473234. Organic electrical bistable devices and rewritable memory cells

Organic electrical bistable devices and rewritable memory cells

10.1063/1.1473234

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electrical bistability is a phenomenon in which a device exhibits two states of different conductivities, at the same applied voltage. We report an organic electrical bistable device (OBD) comprising of a thin metal layer embedded within the organic material, as the active medium [L. P. Ma, J. Liu, and Y. Yang, US Patent Pending, (2001)]. The performance of this device makes it attractive for memory-cell type of applications. The two states of the OBD differ in their conductivity by several orders in magnitude and show remarkable stability, i.e., once the device reaches either state, it tends to remain in that state for a prolonged period of time. More importantly, the high and low conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase), respectively. One million writing-erasing cycles for the OBD have been tested in ambient conditions without significant device degradation. These discoveries pave the way for newer applications, such as low-cost, large-area, flexible, high-density, electrically addressable data storage devices.

Bibliography

Ma, L. P., Liu, J., & Yang, Y. (2002). Organic electrical bistable devices and rewritable memory cells. Applied Physics Letters, 80(16), 2997â2999.

Authors 3

L. P. Ma (first)
J. Liu (additional)
Y. Yang (additional)

References 12 Referenced 440

10.1038/44352 / Nature (London) (1999)
10.1063/1.126902 / Appl. Phys. Lett. (2000)
10.1103/PhysRevLett.84.1284 / Phys. Rev. Lett. (2000)
{'key': '2024020322095350400_r4', 'first-page': '139', 'volume': 'N51', 'year': '1971', 'journal-title': 'Discuss. Faraday Soc.'} / Discuss. Faraday Soc. (1971)
10.1103/PhysRevLett.84.1780 / Phys. Rev. Lett. (2000)
10.1063/1.1655065 / Appl. Phys. Lett. (1974)
10.1063/1.1653751 / Appl. Phys. Lett. (1971)
{'key': '2024020322095350400_r8', 'first-page': '140', 'volume': '47', 'year': '1976', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1976)
10.1063/1.90814 / Appl. Phys. Lett. (1979)
10.1126/science.284.5420.1645 / Science (1999)
10.1063/1.1289650 / Appl. Phys. Lett. (2000)
{'key': '2024020322095350400_r12'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:23 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 5:10 p.m.)
Indexed	1 week ago (Aug. 23, 2025, 12:58 a.m.)
Issued	23 years, 4 months ago (April 22, 2002)
Published	23 years, 4 months ago (April 22, 2002)
Published Print	23 years, 4 months ago (April 22, 2002)

Funders 0

None

BibTeX

@article{Ma_2002, title={Organic electrical bistable devices and rewritable memory cells}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1473234}, DOI={10.1063/1.1473234}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ma, L. P. and Liu, J. and Yang, Y.}, year={2002}, month=apr, pages={2997–2999} }

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