DOI: 10.1063/1.1470696. Microscopic evidence of point defect incorporation in laterally overgrown GaN

Microscopic evidence of point defect incorporation in laterally overgrown GaN

10.1063/1.1470696

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electron microscopy techniques are applied to investigate structural and optical properties of GaN layers selectively grown by hydride vapor phase epitaxy on crystalline GaN seed layers deposited on (0001)Al2O3 substrates. Regions with different optical properties are observed in the cross- sections of the layers. They are defined by the crystallographic planes that serve as growth facets. We give a simple geometrical explanation of point defect incorporation occurring more easily for the {112̄2} GaN than for the {0001} GaN growth facets. Microscopic evidences supporting the model are higher concentrations of point-like defects and local strain variations in laterally grown regions that are revealed by high-resolution electron microscopy.

Bibliography

GradeÄak, S., Wagner, V., Ilegems, M., Riemann, T., Christen, J., & Stadelmann, P. (2002). Microscopic evidence of point defect incorporation in laterally overgrown GaN. Applied Physics Letters, 80(16), 2866â2868.

Authors 6

S. Gradečak (first)
V. Wagner (additional)
M. Ilegems (additional)
T. Riemann (additional)
J. Christen (additional)
P. Stadelmann (additional)

References 13 Referenced 7

10.1063/1.96797 / Appl. Phys. Lett. (1986)
10.1143/JJAP.30.L1705 / Jpn. J. Appl. Phys., Part 2 (1991)
10.1143/JJAP.36.L899 / Jpn. J. Appl. Phys., Part 2 (1997)
10.1063/1.120091 / Appl. Phys. Lett. (1997)
10.1063/1.120044 / Appl. Phys. Lett. (1997)
10.1016/S0022-0248(97)00075-4 / J. Cryst. Growth (1997)
10.1063/1.119626 / Appl. Phys. Lett. (1997)
10.1557/S1092578300001125 / MRS Internet J. Nitride Semicond. Res. (1998)
10.1063/1.123071 / Appl. Phys. Lett. (1999)
10.1016/S0304-3991(98)00035-7 / Ultramicroscopy (1998)
{'key': '2024020322080833800_r11'}
10.1063/1.357592 / J. Appl. Phys. (1994)
10.1103/PhysRevB.54.17745 / Phys. Rev. B (1996)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:23 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 5:08 p.m.)
Indexed	1 year, 7 months ago (Feb. 3, 2024, 5:40 p.m.)
Issued	23 years, 4 months ago (April 22, 2002)
Published	23 years, 4 months ago (April 22, 2002)
Published Print	23 years, 4 months ago (April 22, 2002)

Funders 0

None

BibTeX

@article{Grade_ak_2002, title={Microscopic evidence of point defect incorporation in laterally overgrown GaN}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1470696}, DOI={10.1063/1.1470696}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gradečak, S. and Wagner, V. and Ilegems, M. and Riemann, T. and Christen, J. and Stadelmann, P.}, year={2002}, month=apr, pages={2866–2868} }

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