Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Temperature-dependent current-voltage measurements are used to determine the dominant recombination path in thin-film heterojunction solar cells based on a variety of Cu(In,Ga)(Se,S)2 alloys. The activation energy of recombination follows the band gap energy of the respective Cu(In,Ga)(Se,S)2 alloy as long as the films are grown with a Cu-poor final composition. Thus, electronic loss in these devices is dominated by bulk recombination. In contrast, all devices based on absorber alloys with a Cu-rich composition prior to heterojunction formation are dominated by recombination at the heterointerface, with activation energies smaller than the band gap energy of the absorber material. These activation energies are independent from the S/Se ratio but increase with increasing Ga/In ratio.

Bibliography

Turcu, M., Pakma, O., & Rau, U. (2002). Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)2 heterojunction solar cells. Applied Physics Letters, 80(14), 2598–2600.

Authors 3
  1. M. Turcu (first)
  2. O. Pakma (additional)
  3. U. Rau (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 10:18 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 5:01 p.m.)
Indexed 1 day, 17 hours ago (Aug. 21, 2025, 1:16 p.m.)
Issued 23 years, 4 months ago (April 8, 2002)
Published 23 years, 4 months ago (April 8, 2002)
Published Print 23 years, 4 months ago (April 8, 2002)
Funders 0

None

@article{Turcu_2002, title={Interdependence of absorber composition and recombination mechanism in Cu(In,Ga)(Se,S)2 heterojunction solar cells}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1467621}, DOI={10.1063/1.1467621}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Turcu, M. and Pakma, O. and Rau, U.}, year={2002}, month=apr, pages={2598–2600} }