DOI: 10.1063/1.1461421. Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature

10.1063/1.1461421

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A GaAs junction field-effect transistor (JFET) is a promising candidate for low-frequency, low-noise, and low-power cryogenic electronics to read out high-impedance photodetectors. We report on the spectral noise characteristics of a SONY n-type GaAs JFET, operating at the depression mode, at a cryogenic temperature of 4.2 K. If the GaAs JFET is turned on at 4.2 K, a random telegraph signal (RTS) is found to be the dominant noise source at low frequencies. However, the switching rate of RTS can be drastically reduced if the GaAs JFET is heated up to 55 K and cooled down again to 4.2 K while keeping the same drain current flow. We refer to this phenomenon as the thermal cure (TC). With TC, low-frequency noise can be reduced to below 1 μV/Hz1/2 at 1 Hz. The critical temperature for TC is found to be ∼35 K for our GaAs JFET.

Bibliography

Fujiwara, M., Sasaki, M., & Akiba, M. (2002). Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature. Applied Physics Letters, 80(10), 1844â1846.

Authors 3

M. Fujiwara (first)
M. Sasaki (additional)
M. Akiba (additional)

References 13 Referenced 17

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{'key': '2024020321500806100_r3', 'first-page': '28', 'volume': '2226', 'year': '1994', 'journal-title': 'Proc. SPIE'} / Proc. SPIE (1994)
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10.1063/1.359018 / J. Appl. Phys. (1995)
10.1063/1.116393 / Appl. Phys. Lett. (1996)
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{'key': '2024020321500806100_r9'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:51 p.m.)
Indexed	5 months ago (March 22, 2025, 4:31 a.m.)
Issued	23 years, 5 months ago (March 11, 2002)
Published	23 years, 5 months ago (March 11, 2002)
Published Print	23 years, 5 months ago (March 11, 2002)

Funders 0

None

BibTeX

@article{Fujiwara_2002, title={Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1461421}, DOI={10.1063/1.1461421}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fujiwara, M. and Sasaki, M. and Akiba, M.}, year={2002}, month=mar, pages={1844–1846} }

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