DOI: 10.1063/1.1461419. Generalized Einstein relation for disordered semiconductors

Generalized Einstein relation for disordered semiconductors—implications for device performance

10.1063/1.1461419

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasiequilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel width in field-effect transistors is discussed.

Bibliography

Roichman, Y., & Tessler, N. (2002). Generalized Einstein relation for disordered semiconductorsâimplications for device performance. Applied Physics Letters, 80(11), 1948â1950.

Authors 2

Yohai Roichman (first)
Nir Tessler (additional)

References 16 Referenced 268

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10.1002/(SICI)1521-4095(199905)11:7<519::AID-ADMA519>3.0.CO;2-E / Adv. Mater. (1999)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:27 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:52 p.m.)
Indexed	1 week, 5 days ago (Aug. 23, 2025, 9:21 p.m.)
Issued	23 years, 5 months ago (March 18, 2002)
Published	23 years, 5 months ago (March 18, 2002)
Published Print	23 years, 5 months ago (March 18, 2002)

Funders 0

None

BibTeX

@article{Roichman_2002, title={Generalized Einstein relation for disordered semiconductors—implications for device performance}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1461419}, DOI={10.1063/1.1461419}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Roichman, Yohai and Tessler, Nir}, year={2002}, month=mar, pages={1948–1950} }

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