Abstract
A method is developed to simultaneously measure the Seebeck coefficient and thermal conductivity in the cross-plane direction of thin films and applied to an n-type Si/Ge quantum-dot superlattice. In this method, an Au/Cr pattern serves as both a heater and a thermometer, and a microprobe is prepared between the heater and the thin film to extract the Seebeck voltage. Using a differential measurement between the thin films with different thickness, the temperature and voltage drops across the thin film are determined to deduce its cross-plane thermal conductivity and Seebeck coefficient. At room temperature, the cross-plane Seebeck coefficient and thermal conductivity are 312 μV/K and 2.92 W/mK, respectively, for the n-type Si(75 Å)/Ge(15 Å) quantum-dot superlattice doped to 8.7×1019 cm−3.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:26 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:52 p.m.) |
Indexed | 1 week, 3 days ago (Aug. 23, 2025, 12:58 a.m.) |
Issued | 23 years, 5 months ago (March 11, 2002) |
Published | 23 years, 5 months ago (March 11, 2002) |
Published Print | 23 years, 5 months ago (March 11, 2002) |
@article{Yang_2002, title={Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1458693}, DOI={10.1063/1.1458693}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, B. and Liu, J. L. and Wang, K. L. and Chen, G.}, year={2002}, month=mar, pages={1758–1760} }