Abstract
We report a polarization-sensitive scanning microwave microscope based on a bimodal dielectric resonator with a cross-slit aperture. The microscope operates at ∼26 GHz in the reflection mode and has a subwavelength spatial resolution. It allows contactless mapping of the conductivity tensor, including magnetic-field-induced terms such as the Hall effect. We demonstrate local contactless measurement of the ordinary Hall effect in semiconducting wafers and of the extraordinary Hall effect in thin ferromagnetic Ni films. The latter yields out-of-plane magnetization. The microwave measurements are in good agreement with the dc Hall-effect measurements.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:26 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:52 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 8:27 p.m.) |
Issued | 23 years, 5 months ago (March 11, 2002) |
Published | 23 years, 5 months ago (March 11, 2002) |
Published Print | 23 years, 5 months ago (March 11, 2002) |
@article{Abu_Teir_2002, title={Local contactless measurement of the ordinary and extraordinary Hall effect using near-field microwave microscopy}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1456541}, DOI={10.1063/1.1456541}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Abu-Teir, M. and Sakran, F. and Golosovsky, M. and Davidov, D. and Frenkel, A.}, year={2002}, month=mar, pages={1776–1778} }