DOI: 10.1063/1.1455689. Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation

Band anticrossing in group II-Ox–VI1−x highly mismatched alloys: Cd1−xMnyOxTe1−x quaternaries synthesized by O ion implantation

10.1063/1.1455689

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Highly mismatched group II-Ox–VI1−x alloys have been synthesized by oxygen implantation into Cd1−yMnyTe crystals. In crystals with y&gt;0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd0.38Mn0.62Te. This striking behavior is consistent with the band anticrossing model which predicts that repulsive interaction between localized states of O and the extended states of the conduction band causes the band gap reduction. These large, O-induced effects provide a unique opportunity by which to control the optical and electronic properties in II–VI alloys.

Bibliography

Yu, K. M., Walukiewicz, W., Wu, J., Beeman, J. W., Ager, J. W., Haller, E. E., Miotkowski, I., Ramdas, A. K., & Becla, P. (2002). Band anticrossing in group II-OxâVI1âx highly mismatched alloys: Cd1âxMnyOxTe1âx quaternaries synthesized by O ion implantation. Applied Physics Letters, 80(9), 1571â1573.

Authors 9

K. M. Yu (first)
W. Walukiewicz (additional)
J. Wu (additional)
J. W. Beeman (additional)
J. W. Ager (additional)
E. E. Haller (additional)
I. Miotkowski (additional)
A. K. Ramdas (additional)
P. Becla (additional)

References 21 Referenced 31

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{'key': '2024020321471057400_r9'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:50 p.m.)
Indexed	1 year, 1 month ago (July 28, 2024, 7:11 a.m.)
Issued	23 years, 6 months ago (March 4, 2002)
Published	23 years, 6 months ago (March 4, 2002)
Published Print	23 years, 6 months ago (March 4, 2002)

Funders 0

None

BibTeX

@article{Yu_2002, title={Band anticrossing in group II-Ox‚ÄďVI1‚ąíx highly mismatched alloys: Cd1‚ąíxMnyOxTe1‚ąíx quaternaries synthesized by O ion implantation}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1455689}, DOI={10.1063/1.1455689}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yu, K. M. and Walukiewicz, W. and Wu, J. and Beeman, J. W. and Ager, J. W. and Haller, E. E. and Miotkowski, I. and Ramdas, A. K. and Becla, P.}, year={2002}, month=mar, pages={1571‚Äď1573} }

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