Abstract
A direct wafer bonding process has been developed to accurately control both the bonding interface twist and tilt angles between a monocrystalline layer and a bare monocrystalline wafer. This process is based on the bonding of twin surfaces produced by splitting a single wafer, using for instance the Smart Cut® process. A targeted control of ±0.005° is obtained for the twist angle without any crystallographic measurement. Moreover, pure twist-bonded interfaces have been artificially made between two (001) bonded silicon surfaces.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:24 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:39 p.m.) |
Indexed | 4 months, 4 weeks ago (April 2, 2025, 6:04 a.m.) |
Issued | 23 years, 6 months ago (Feb. 4, 2002) |
Published | 23 years, 6 months ago (Feb. 4, 2002) |
Published Print | 23 years, 6 months ago (Feb. 4, 2002) |
@article{Fournel_2002, title={Accurate control of the misorientation angles in direct wafer bonding}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1446987}, DOI={10.1063/1.1446987}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fournel, Frank and Moriceau, Hubert and Aspar, Bernard and Rousseau, Karine and Eymery, Joël and Rouvière, Jean-Luc and Magnea, Noël}, year={2002}, month=feb, pages={793–795} }