Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report the properties of a spin-polarized In0.4Ga0.6As/GaAs quantum-dot surface-light-emitting diode with a Ga0.974Mn0.026As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be ∼36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer.

Bibliography

Ghosh, S., & Bhattacharya, P. (2002). Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode. Applied Physics Letters, 80(4), 658–660.

Authors 2
  1. S. Ghosh (first)
  2. P. Bhattacharya (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:24 a.m.)
Deposited 1 year, 7 months ago (Feb. 3, 2024, 4:36 p.m.)
Indexed 2 months ago (July 4, 2025, 8:45 a.m.)
Issued 23 years, 7 months ago (Jan. 28, 2002)
Published 23 years, 7 months ago (Jan. 28, 2002)
Published Print 23 years, 7 months ago (Jan. 28, 2002)
Funders 0

None

@article{Ghosh_2002, title={Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1436526}, DOI={10.1063/1.1436526}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ghosh, S. and Bhattacharya, P.}, year={2002}, month=jan, pages={658–660} }