Abstract
We report the properties of a spin-polarized In0.4Ga0.6As/GaAs quantum-dot surface-light-emitting diode with a Ga0.974Mn0.026As spin injector layer. Spin-polarized holes from this ferromagnetic layer recombine with electrons in the quantum dots to produce circularly polarized light output. The peak optical polarization efficiency at 5.1 K is 18% and the spin injection efficiency is estimated to be ∼36%. The temperature dependence of spin injection is almost identical to the temperature dependence of magnetization in the (Ga, Mn)As layer.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:24 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 4:36 p.m.) |
Indexed | 2 months ago (July 4, 2025, 8:45 a.m.) |
Issued | 23 years, 7 months ago (Jan. 28, 2002) |
Published | 23 years, 7 months ago (Jan. 28, 2002) |
Published Print | 23 years, 7 months ago (Jan. 28, 2002) |
@article{Ghosh_2002, title={Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1436526}, DOI={10.1063/1.1436526}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ghosh, S. and Bhattacharya, P.}, year={2002}, month=jan, pages={658–660} }