Abstract
The a- and c-axis-oriented epitaxial thin films of layered nickelate La2−xSrxNiO4 (0.5⩽x⩽1.5), of which bulk single crystals are not available, were grown on LaSrAlO4 (100) and (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (001) substrates, respectively. Due to the in-plane anisotropy of the lattice mismatch, the lattice parameters of the a-axis-oriented films vary with x in a different manner from those of the ceramics. In the a-axis-oriented films, resistivity, and optical spectra show large anisotropy between the b and c axes, indicating the quasi-two-dimensional nature of the electronic structure in La2−xSrxNiO4.
References
9
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:24 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 4:36 p.m.) |
Indexed | 4 weeks ago (Aug. 7, 2025, 4:42 p.m.) |
Issued | 23 years, 7 months ago (Jan. 28, 2002) |
Published | 23 years, 7 months ago (Jan. 28, 2002) |
Published Print | 23 years, 7 months ago (Jan. 28, 2002) |
@article{Shinomori_2002, title={Orientation-controlled epitaxy and anisotropic properties of La2‚ąíxSrxNiO4 with 0.5‚©Ĺx‚©Ĺ1.5 covering the insulator‚Äďmetal transition}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1436523}, DOI={10.1063/1.1436523}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shinomori, S. and Kawasaki, M. and Tokura, Y.}, year={2002}, month=jan, pages={574‚Äď576} }