Abstract
White-colored materials synthesized by a thermal annealing of milled GaN powders at 930 °C in a nitrogen atmosphere were identified to be monoclinic β-Ga2O3 nanowires by x-ray diffraction and scanning electron microscopy. High-resolution transmission electron microscopy revealed that these nanowires are single nanocrystals, and energy dispersive x-ray indicated that these nanomaterials are free of any metals. In addition, bundles of these crystalline nanowires in the rectangular-pole shape are a few centimeters in length.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:08 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 4:29 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 3, 2024, 6:28 p.m.) |
Issued | 23 years, 7 months ago (Jan. 21, 2002) |
Published | 23 years, 7 months ago (Jan. 21, 2002) |
Published Print | 23 years, 7 months ago (Jan. 21, 2002) |
@article{Kim_2002, title={β- Ga 2 O 3 nanowires synthesized from milled GaN powders}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1435073}, DOI={10.1063/1.1435073}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, B. C. and Sun, K. T. and Park, K. S. and Im, K. J. and Noh, T. and Sung, M. Y. and Kim, S. and Nahm, S. and Choi, Y. N. and Park, S. S.}, year={2002}, month=jan, pages={479–481} }