Abstract
We have realized a small-molecule organic light-emitting diode where the intrinsic emitter layer is sandwiched by n- and p-doped transport layers with appropriate blocking layers. The diodes based on this pin concept have exponential forward characteristics up to comparatively high current densities. The diodes reach high brightness at very low operating voltage: for instance, 1000 cd/m2 at a voltage of 2.9 V. Despite the highly doped transport layers, the devices reach very high efficiency for the given emitter system up to high brightness.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:24 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:27 p.m.) |
Indexed | 1 month, 2 weeks ago (July 13, 2025, 10:28 p.m.) |
Issued | 23 years, 7 months ago (Jan. 7, 2002) |
Published | 23 years, 7 months ago (Jan. 7, 2002) |
Published Print | 23 years, 7 months ago (Jan. 7, 2002) |
@article{Huang_2002, title={Low-voltage organic electroluminescent devices using pin structures}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1432110}, DOI={10.1063/1.1432110}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, Jingsong and Pfeiffer, Martin and Werner, Ansgar and Blochwitz, Jan and Leo, Karl and Liu, Shiyong}, year={2002}, month=jan, pages={139–141} }