Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We have realized a small-molecule organic light-emitting diode where the intrinsic emitter layer is sandwiched by n- and p-doped transport layers with appropriate blocking layers. The diodes based on this pin concept have exponential forward characteristics up to comparatively high current densities. The diodes reach high brightness at very low operating voltage: for instance, 1000 cd/m2 at a voltage of 2.9 V. Despite the highly doped transport layers, the devices reach very high efficiency for the given emitter system up to high brightness.

Bibliography

Huang, J., Pfeiffer, M., Werner, A., Blochwitz, J., Leo, K., & Liu, S. (2002). Low-voltage organic electroluminescent devices using pin structures. Applied Physics Letters, 80(1), 139–141.

Authors 6
  1. Jingsong Huang (first)
  2. Martin Pfeiffer (additional)
  3. Ansgar Werner (additional)
  4. Jan Blochwitz (additional)
  5. Karl Leo (additional)
  6. Shiyong Liu (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:24 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 4:27 p.m.)
Indexed 1 month, 2 weeks ago (July 13, 2025, 10:28 p.m.)
Issued 23 years, 7 months ago (Jan. 7, 2002)
Published 23 years, 7 months ago (Jan. 7, 2002)
Published Print 23 years, 7 months ago (Jan. 7, 2002)
Funders 0

None

@article{Huang_2002, title={Low-voltage organic electroluminescent devices using pin structures}, volume={80}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1432110}, DOI={10.1063/1.1432110}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Huang, Jingsong and Pfeiffer, Martin and Werner, Ansgar and Blochwitz, Jan and Leo, Karl and Liu, Shiyong}, year={2002}, month=jan, pages={139–141} }