DOI: 10.1063/1.1427153. Effect of dislocations on thermal conductivity of GaN layers

Effect of dislocations on thermal conductivity of GaN layers

10.1063/1.1427153

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report calculation of the lattice thermal conductivity in wurtzite GaN. The proposed model is material specific and explicitly includes phonon relaxation on threading dislocations and impurities typical for GaN. We have found that a decrease of the dislocation density by two orders of magnitude in GaN leads to a corresponding increase of the thermal conductivity from 1.31 to 1.97 W/cm K. This theoretical prediction is in very good agreement with experimental data obtained from scanning thermal microscopy. The developed model can be used for thermal budget calculations in high-power density GaN devices.

Bibliography

Kotchetkov, D., Zou, J., Balandin, A. A., Florescu, D. I., & Pollak, F. H. (2001). Effect of dislocations on thermal conductivity of GaN layers. Applied Physics Letters, 79(26), 4316â4318.

Authors 5

D. Kotchetkov (first)
J. Zou (additional)
A. A. Balandin (additional)
D. I. Florescu (additional)
Fred H. Pollak (additional)

References 18 Referenced 127

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10.1063/1.124654 / Appl. Phys. Lett. (1999)
10.1063/1.1308057 / Appl. Phys. Lett. (2000)
{'key': '2024020321221173300_r4', 'first-page': '62', 'volume': '7', 'year': '2001', 'journal-title': 'Compound Semicond.'} / Compound Semicond. (2001)
10.1016/S0925-9635(97)00336-1 / Diamond Relat. Mater. (1998)
10.1016/0022-3697(73)90092-9 / J. Phys. Chem. Solids (1973)
{'key': '2024020321221173300_r7'}
{'key': '2024020321221173300_r8'}
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{'key': '2024020321221173300_r13'}
10.1063/1.121144 / Appl. Phys. Lett. (1998)
{'key': '2024020321221173300_r15', 'first-page': '1113', 'volume': '12-A', 'year': '1955', 'journal-title': 'Proc. Phys. Soc., LXVIII'} / Proc. Phys. Soc., LXVIII (1955)
10.1016/S0022-0248(00)00711-9 / J. Cryst. Growth (2000)
{'key': '2024020321221173300_r17'}
10.1063/1.113252 / Appl. Phys. Lett. (1995)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:15 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:22 p.m.)
Indexed	3 days, 1 hour ago (Aug. 19, 2025, 6:54 a.m.)
Issued	23 years, 7 months ago (Dec. 24, 2001)
Published	23 years, 7 months ago (Dec. 24, 2001)
Published Print	23 years, 7 months ago (Dec. 24, 2001)

Funders 0

None

BibTeX

@article{Kotchetkov_2001, title={Effect of dislocations on thermal conductivity of GaN layers}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1427153}, DOI={10.1063/1.1427153}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kotchetkov, D. and Zou, J. and Balandin, A. A. and Florescu, D. I. and Pollak, Fred H.}, year={2001}, month=dec, pages={4316–4318} }

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