DOI: 10.1063/1.1425434. Model for Schottky barrier and surface states in nanostructured <i>n</i>-type semiconductors

Model for Schottky barrier and surface states in nanostructured n-type semiconductors

10.1063/1.1425434

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A semiclassical model for Schottky contacts to be applied to nanosized polycrystalline n-type semiconductors was developed. To this purpose we determined the density of surface states as a function of the mean grain radius, which establishes the Schottky barrier height. The intergranular potential shape was investigated in depletion approximation under spherical geometry and a critical revision of this method was proposed. The model was then extended to also include nanostructured materials, which could not be considered in the previous approach. Thus we were able to explain the flattening of the band bending and the decrease in the surface state density, which are experimentally observed when the granulometry is very fine.

Bibliography

MalagÃ¹, C., Guidi, V., Stefancich, M., Carotta, M. C., & Martinelli, G. (2002). Model for Schottky barrier and surface states in nanostructured n-type semiconductors. Journal of Applied Physics, 91(2), 808â814.

Authors 5

C. Malagù (first)
V. Guidi (additional)
M. Stefancich (additional)
M. C. Carotta (additional)
G. Martinelli (additional)

References 28 Referenced 112

10.1142/S0218625X95000480 / Surf. Rev. Lett. (1995)
{'key': '2024020614471872200_r2'}
{'key': '2024020614471872200_r3'}
10.1103/PhysRevLett.60.440 / Phys. Rev. Lett. (1988)
10.1063/1.321593 / J. Appl. Phys. (1975)
10.1063/1.1343520 / J. Appl. Phys. (2001)
10.1016/S0039-6028(99)00210-1 / Surf. Sci. (1999)
{'key': '2024020614471872200_r8', 'first-page': '287', 'volume': '365', 'year': '1999', 'journal-title': 'J. Anal. Chem. USSR'} / J. Anal. Chem. USSR (1999)
10.1103/PhysRev.71.717 / Phys. Rev. (1947)
10.1116/1.570215 / J. Vac. Sci. Technol. (1979)
10.1016/S0039-6028(98)00833-4 / Surf. Sci. (1999)
{'key': '2024020614471872200_r12'}
{'key': '2024020614471872200_r13', 'first-page': '25', 'volume': '24', 'year': '1999', 'journal-title': 'MRS Bull.'} / MRS Bull. (1999)
10.1016/S0169-4332(00)00386-X / Appl. Surf. Sci. (2000)
10.1063/1.340419 / J. Appl. Phys. (1988)
10.1016/0925-4005(95)01267-2 / Sens. Actuators B (1995)
10.1016/S0038-1101(00)00227-6 / Solid-State Electron. (2001)
{'key': '2024020614471872200_r18', 'first-page': '40', 'volume': '33', 'year': '2000', 'journal-title': 'Electron Technol.'} / Electron Technol. (2000)
{'key': '2024020614471872200_r19', 'first-page': '81', 'volume': '43', 'year': '1980', 'journal-title': 'Rep. Prog. Phys.'} / Rep. Prog. Phys. (1980)
10.1016/0925-4005(91)80005-5 / Sens. Actuators B (1991)
10.1039/f19878301323 / J. Chem. Soc., Faraday Trans. 1 (1987)
{'key': '2024020614471872200_r22'}
{'key': '2024020614471872200_r23'}
{'key': '2024020614471872200_r24'}
{'key': '2024020614471872200_r25', 'first-page': '1433', 'volume': '26', 'year': '1969', 'journal-title': 'Phys. Rev. Lett.'} / Phys. Rev. Lett. (1969)
{'key': '2024020614471872200_r26'}
{'key': '2024020614471872200_r27', 'first-page': '25', 'volume': '24', 'year': '1999', 'journal-title': 'MRS Bull.'} / MRS Bull. (1999)
10.1002/(SICI)1521-4095(199908)11:11<943::AID-ADMA943>3.0.CO;2-L / Adv. Mater. (1999)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:24 a.m.)
Deposited	1 year, 7 months ago (Feb. 6, 2024, 10:02 a.m.)
Indexed	11 months, 3 weeks ago (Sept. 14, 2024, 4:34 a.m.)
Issued	23 years, 7 months ago (Jan. 15, 2002)
Published	23 years, 7 months ago (Jan. 15, 2002)
Published Print	23 years, 7 months ago (Jan. 15, 2002)

Funders 0

None

BibTeX

@article{Malag__2002, title={Model for Schottky barrier and surface states in nanostructured n-type semiconductors}, volume={91}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1425434}, DOI={10.1063/1.1425434}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Malagù, C. and Guidi, V. and Stefancich, M. and Carotta, M. C. and Martinelli, G.}, year={2002}, month=jan, pages={808–814} }

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