DOI: 10.1063/1.1423406. Local structure and chemical valency of Mn impurities in wide-band-gap III–V magnetic alloy semiconductors Ga1−xMnxN

Local structure and chemical valency of Mn impurities in wide-band-gap III–V magnetic alloy semiconductors Ga1−xMnxN

10.1063/1.1423406

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.

Bibliography

Soo, Y. L., Kioseoglou, G., Kim, S., Huang, S., Kao, Y. H., Kuwabara, S., Owa, S., Kondo, T., & Munekata, H. (2001). Local structure and chemical valency of Mn impurities in wide-band-gap IIIâV magnetic alloy semiconductors Ga1âxMnxN. Applied Physics Letters, 79(24), 3926â3928.

Authors 9

Y. L. Soo (first)
G. Kioseoglou (additional)
S. Kim (additional)
S. Huang (additional)
Y. H. Kao (additional)
S. Kuwabara (additional)
S. Owa (additional)
T. Kondo (additional)
H. Munekata (additional)

References 18 Referenced 92

10.1103/PhysRevLett.78.4617 / Phys. Rev. Lett. (1997)
10.1063/1.364889 / J. Appl. Phys. (1997)
10.1038/35050040 / Nature (London) (2000)
10.1103/PhysRevLett.80.4313 / Phys. Rev. Lett. (1998)
10.1103/PhysRevLett.63.1849 / Phys. Rev. Lett. (1989)
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10.1103/PhysRevB.58.1928 / Phys. Rev. B (1998)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 8:01 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 4:18 p.m.)
Indexed	1 month, 2 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	23 years, 8 months ago (Dec. 10, 2001)
Published	23 years, 8 months ago (Dec. 10, 2001)
Published Print	23 years, 8 months ago (Dec. 10, 2001)

Funders 0

None

BibTeX

@article{Soo_2001, title={Local structure and chemical valency of Mn impurities in wide-band-gap III–V magnetic alloy semiconductors Ga1−xMnxN}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1423406}, DOI={10.1063/1.1423406}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Soo, Y. L. and Kioseoglou, G. and Kim, S. and Huang, S. and Kao, Y. H. and Kuwabara, S. and Owa, S. and Kondo, T. and Munekata, H.}, year={2001}, month=dec, pages={3926–3928} }

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