DOI: 10.1063/1.1417995. Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator <i>P</i>-channel metal–oxide

Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors

10.1063/1.1417995

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) were characterized. A simple method was demonstrated for the fabrication of fully depleted thin-film SOI MOSFETs with a single stacking fault in their channel region. SOI islands were created using selective epitaxial growth/epitaxial lateral overgrowth technology. The influence of a single stacking fault on device I–V characteristics was determined and compared to that of nearby identical devices without stacking faults. Off-state leakage currents, a threshold voltage shift, and drive current lowering were observed for devices with a single stacking fault in their channel region. Based on the location of the single stacking fault relative to the device channel region, various physical models were proposed to explain the phenomena observed.

Bibliography

Yang, J., Neudeck, G. W., & Denton, J. P. (2002). Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metalâoxideâsemiconductor field-effect transistors. Journal of Applied Physics, 91(1), 420â426.

Authors 3

Jianan Yang (first)
Gerold W. Neudeck (additional)
John P. Denton (additional)

References 23 Referenced 12

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{'key': '2024020521252957800_r6'}
{'key': '2024020521252957800_r7'}
{'key': '2024020521252957800_r8'}
10.1109/55.624937 / IEEE Electron Device Lett. (1997)
10.1109/55.761029 / IEEE Electron Device Lett. (1999)
{'key': '2024020521252957800_r11'}
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{'key': '2024020521252957800_r17'}
10.1149/1.2131264 / J. Electrochem. Soc. (1978)
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10.1109/T-ED.1985.22212 / IEEE Trans. Electron Devices (1985)
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10.1016/0038-1101(81)90135-0 / Solid-State Electron. (1981)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:24 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 5:46 p.m.)
Indexed	3 months ago (May 21, 2025, 11:45 a.m.)
Issued	23 years, 7 months ago (Jan. 1, 2002)
Published	23 years, 7 months ago (Jan. 1, 2002)
Published Print	23 years, 7 months ago (Jan. 1, 2002)

Funders 0

None

BibTeX

@article{Yang_2002, title={Electrical effects of a single stacking fault on fully depleted thin-film silicon-on-insulator P-channel metal–oxide–semiconductor field-effect transistors}, volume={91}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1417995}, DOI={10.1063/1.1417995}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yang, Jianan and Neudeck, Gerold W. and Denton, John P.}, year={2002}, month=jan, pages={420–426} }

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