Abstract
Crystallization processes in different Te alloys, employed in phase change materials for optical data storage, have been investigated by in situ mechanical stress measurements. Upon crystallization a considerable stress buildup is observed, which scales with the volume change upon crystallization. Nevertheless the observed stress change only corresponds to approximately 9% of the stress estimated for a purely elastic transformation. Further evidence of stress relief phenomena comes from the temperature dependence of the stress in the crystalline and amorphous states. Ultrathin dielectric layers have a profound influence on the crystallization process as evidenced by simultaneous optical reflectance and mechanical stress measurements. This observation can be explained by heterogeneous nucleation of crystallites at the interface between the dielectric layer and the phase change film.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 8:01 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 4:11 p.m.) |
Indexed | 1 month ago (July 24, 2025, 7:33 a.m.) |
Issued | 23 years, 8 months ago (Nov. 26, 2001) |
Published | 23 years, 8 months ago (Nov. 26, 2001) |
Published Print | 23 years, 8 months ago (Nov. 26, 2001) |
@article{Pedersen_2001, title={Mechanical stresses upon crystallization in phase change materials}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1415419}, DOI={10.1063/1.1415419}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pedersen, T. P. Leervad and Kalb, J. and Njoroge, W. K. and Wamwangi, D. and Wuttig, M. and Spaepen, F.}, year={2001}, month=nov, pages={3597–3599} }