DOI: 10.1063/1.1415374. Two-dimensional simulation of polymer field-effect transistor

Two-dimensional simulation of polymer field-effect transistor

10.1063/1.1415374

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

A two-dimensional simulation of intrinsic top-contact field-effect transistor is presented. The simulated structure is unique to organic transistors and hence is most relevant. By time resolving the operation of such a transistor, the mechanisms underlying its operation are resolved. The effect of this device configuration on the measured “intrinsic” material properties is also discussed and shown to explain previously reported features.

Bibliography

Tessler, N., & Roichman, Y. (2001). Two-dimensional simulation of polymer field-effect transistor. Applied Physics Letters, 79(18), 2987â2989.

Authors 2

N. Tessler (first)
Y. Roichman (additional)

References 17 Referenced 63

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{'key': '2024020321015298800_r17'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:24 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 4:02 p.m.)
Indexed	4 months, 3 weeks ago (April 12, 2025, 1:07 a.m.)
Issued	23 years, 10 months ago (Oct. 29, 2001)
Published	23 years, 10 months ago (Oct. 29, 2001)
Published Print	23 years, 10 months ago (Oct. 29, 2001)

Funders 0

None

BibTeX

@article{Tessler_2001, title={Two-dimensional simulation of polymer field-effect transistor}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1415374}, DOI={10.1063/1.1415374}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tessler, N. and Roichman, Y.}, year={2001}, month=oct, pages={2987–2989} }

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