Abstract
The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current–voltage (I–V) characteristics akin to a p–n diode. The observed asymmetry in the I–V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p–n diode can be constructed.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:26 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 3:54 p.m.) |
Indexed | 1 month, 3 weeks ago (July 4, 2025, 9:03 a.m.) |
Issued | 23 years, 10 months ago (Oct. 8, 2001) |
Published | 23 years, 10 months ago (Oct. 8, 2001) |
Published Print | 23 years, 10 months ago (Oct. 8, 2001) |
@article{Mitra_2001, title={p–n diode with hole- and electron-doped lanthanum manganites}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1409592}, DOI={10.1063/1.1409592}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mitra, C. and Raychaudhuri, P. and Köbernik, G. and Dörr, K. and Müller, K.-H. and Schultz, L. and Pinto, R.}, year={2001}, month=oct, pages={2408–2410} }