Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The hole-doped (p-) manganite La0.7Ca0.3MnO3 and the electron-doped (n-) manganite La0.7Ce0.3MnO3 undergo an insulator-to-metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e., in the semiconducting regime, it exhibits asymmetric current–voltage (I–V) characteristics akin to a p–n diode. The observed asymmetry in the I–V characteristics disappears at low temperatures where both the manganite layers are metallic. These results indicate that using the polaronic semiconducting regime of doped manganites, a p–n diode can be constructed.

Bibliography

Mitra, C., Raychaudhuri, P., Köbernik, G., Dörr, K., Müller, K.-H., Schultz, L., & Pinto, R. (2001). p–n diode with hole- and electron-doped lanthanum manganites. Applied Physics Letters, 79(15), 2408–2410.

Authors 7
  1. C. Mitra (first)
  2. P. Raychaudhuri (additional)
  3. G. Köbernik (additional)
  4. K. Dörr (additional)
  5. K.-H. Müller (additional)
  6. L. Schultz (additional)
  7. R. Pinto (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:26 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 3:54 p.m.)
Indexed 1 month, 3 weeks ago (July 4, 2025, 9:03 a.m.)
Issued 23 years, 10 months ago (Oct. 8, 2001)
Published 23 years, 10 months ago (Oct. 8, 2001)
Published Print 23 years, 10 months ago (Oct. 8, 2001)
Funders 0

None

@article{Mitra_2001, title={p–n diode with hole- and electron-doped lanthanum manganites}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1409592}, DOI={10.1063/1.1409592}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mitra, C. and Raychaudhuri, P. and Köbernik, G. and Dörr, K. and Müller, K.-H. and Schultz, L. and Pinto, R.}, year={2001}, month=oct, pages={2408–2410} }