DOI: 10.1063/1.1404404. Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study

Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study

10.1063/1.1404404

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Time-dependent motion of localized electrons and holes trapped in a SiO2 layer is visualized with electrostatic force microscopy. Both negative and positive charges of up to ∼1010 e/cm2 are trapped at a SiO2–Si interface in ∼500-nm-diam area with a voltage stress between the tip and the sample. There is a higher probability for trapped charges to spread out in the plane direction than to de-trap toward the Si substrate. The dynamics is explained with diffusion and drift of the charges induced by Coulombic interaction.

Bibliography

Buh, G. H., Chung, H. J., & Kuk, Y. (2001). Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study. Applied Physics Letters, 79(13), 2010â2012.

Authors 3

G. H. Buh (first)
H. J. Chung (additional)
Y. Kuk (additional)

References 17 Referenced 63

{'key': '2024020320521799800_r1'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:52 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 3:52 p.m.)
Issued	23 years, 11 months ago (Sept. 24, 2001)
Published	23 years, 11 months ago (Sept. 24, 2001)
Published Print	23 years, 11 months ago (Sept. 24, 2001)

Funders 0

None

BibTeX

@article{Buh_2001, title={Real-time evolution of trapped charge in a SiO2 layer: An electrostatic force microscopy study}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1404404}, DOI={10.1063/1.1404404}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Buh, G. H. and Chung, H. J. and Kuk, Y.}, year={2001}, month=sep, pages={2010–2012} }

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