DOI: 10.1063/1.1396318. Formation of a p-type quantum dot at the end of an n-type carbon nanotube

Formation of a p-type quantum dot at the end of an n-type carbon nanotube

10.1063/1.1396318

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We use field effect doping to study both electron- (n) and hole- (p) type conduction in a semiconducting carbon nanotube. We find that, in the n-type region, the ends of the tube remain p- type due to doping by the metal contacts. As a result, a p–n junction forms near the contact, creating a small, p-type quantum dot between the p–n junction and the contact. This zero-dimensional quantum dot at the end of a one-dimensional semiconductor is the reduced dimensional analog of the two-dimensional inversion layer that forms at the boundary of a gated three-dimensional semiconductor.

Bibliography

Park, J., & McEuen, P. L. (2001). Formation of a p-type quantum dot at the end of an n-type carbon nanotube. Applied Physics Letters, 79(9), 1363â1365.

Authors 2

Jiwoong Park (first)
Paul L. McEuen (additional)

References 18 Referenced 70

{'key': '2024020320395763700_r1'}
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{'key': '2024020320395763700_r13'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:18 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:40 p.m.)
Indexed	4 months, 1 week ago (April 20, 2025, 12:29 a.m.)
Issued	24 years ago (Aug. 27, 2001)
Published	24 years ago (Aug. 27, 2001)
Published Print	24 years ago (Aug. 27, 2001)

Funders 0

None

BibTeX

@article{Park_2001, title={Formation of a p-type quantum dot at the end of an n-type carbon nanotube}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1396318}, DOI={10.1063/1.1396318}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, Jiwoong and McEuen, Paul L.}, year={2001}, month=aug, pages={1363–1365} }

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