DOI: 10.1063/1.1394898. Etching by atomic hydrogen of Ge overlayers on Si(100)

Etching by atomic hydrogen of Ge overlayers on Si(100)

10.1063/1.1394898

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectrometry (LEISS) have been employed to study the kinetics of etching by atomic hydrogen of Ge overlayers on Si(100). The coverage of Ge as deduced by both XPS and LEISS decreases dramatically after exposure to atomic hydrogen, and the decrease is exponential with exposure time. The etch rate of Ge derived from these experiments is found to be a linear function of the flux of atomic hydrogen at sufficiently low temperatures (&lt;180 °C). The rate of etching also depends upon the substrate temperature and a maximum in the etch rate is observed at about 180 °C. A kinetic model is proposed to describe the experimental data quantitatively. The model successfully describes the variation in the rate of etching as functions of the flux of atomic hydrogen and substrate temperature. In particular, the peak observed in the etch rate as a function of substrate temperature is interpreted as due to a similar variation in the coverage of an important reaction intermediate, namely a GeH2(a) surface species.

Bibliography

Zheng, Y.-J., Ma, P. F., & Engstrom, J. R. (2001). Etching by atomic hydrogen of Ge overlayers on Si(100). Journal of Applied Physics, 90(7), 3614â3622.

Authors 3

Y.-J. Zheng (first)
P. F. Ma (additional)
J. R. Engstrom (additional)

References 28 Referenced 13

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{'key': '2024020616261390400_r12'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:44 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 3:31 p.m.)
Indexed	3 months, 3 weeks ago (May 10, 2025, 5:27 a.m.)
Issued	23 years, 11 months ago (Oct. 1, 2001)
Published	23 years, 11 months ago (Oct. 1, 2001)
Published Print	23 years, 11 months ago (Oct. 1, 2001)

Funders 0

None

BibTeX

@article{Zheng_2001, title={Etching by atomic hydrogen of Ge overlayers on Si(100)}, volume={90}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1394898}, DOI={10.1063/1.1394898}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zheng, Y.-J. and Ma, P. F. and Engstrom, J. R.}, year={2001}, month=oct, pages={3614–3622} }

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