Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration, as well as in a metal–semiconductor–metal geometry were implemented. All devices exhibit a high gain at both reverse and forward bias. The photoresponse in the forward bias is in the positive current direction. We attribute the gain to trapping of minority carriers at the semiconductor–metal interface. The excellent agreement between the calculated responsivity and the experiment indicates that the model is valid for all device structures under study, and represents a unified description of gain mechanism in GaN Schottky detectors.

Bibliography

Katz, O., Garber, V., Meyler, B., Bahir, G., & Salzman, J. (2001). Gain mechanism in GaN Schottky ultraviolet detectors. Applied Physics Letters, 79(10), 1417–1419.

Authors 5
  1. O. Katz (first)
  2. V. Garber (additional)
  3. B. Meyler (additional)
  4. G. Bahir (additional)
  5. J. Salzman (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 10:18 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 3:45 p.m.)
Indexed 3 weeks, 5 days ago (July 27, 2025, 3:49 a.m.)
Issued 23 years, 11 months ago (Sept. 3, 2001)
Published 23 years, 11 months ago (Sept. 3, 2001)
Published Print 23 years, 11 months ago (Sept. 3, 2001)
Funders 0

None

@article{Katz_2001, title={Gain mechanism in GaN Schottky ultraviolet detectors}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1394717}, DOI={10.1063/1.1394717}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Katz, O. and Garber, V. and Meyler, B. and Bahir, G. and Salzman, J.}, year={2001}, month=sep, pages={1417–1419} }