DOI: 10.1063/1.1389522. Electrical current distribution across a metal–insulator–metal structure during bistable switching

Electrical current distribution across a metal–insulator–metal structure during bistable switching

10.1063/1.1389522

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.

Bibliography

Rossel, C., Meijer, G. I., BrÃ©maud, D., & Widmer, D. (2001). Electrical current distribution across a metalâinsulatorâmetal structure during bistable switching. Journal of Applied Physics, 90(6), 2892â2898.

Authors 4

C. Rossel (first)
G. I. Meijer (additional)
D. Brémaud (additional)
D. Widmer (additional)

References 35 Referenced 191

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Dates

Type	When
Created	23 years ago (July 26, 2002, 10:13 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 6:18 p.m.)
Indexed	1 week, 4 days ago (Aug. 12, 2025, 5:32 p.m.)
Issued	23 years, 11 months ago (Sept. 15, 2001)
Published	23 years, 11 months ago (Sept. 15, 2001)
Published Print	23 years, 11 months ago (Sept. 15, 2001)

Funders 0

None

BibTeX

@article{Rossel_2001, title={Electrical current distribution across a metal–insulator–metal structure during bistable switching}, volume={90}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1389522}, DOI={10.1063/1.1389522}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Rossel, C. and Meijer, G. I. and Brémaud, D. and Widmer, D.}, year={2001}, month=sep, pages={2892–2898} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        12
      ]
    ],
    "date-time": "2025-08-12T21:32:37Z",
    "timestamp": 1755034357966
  },
  "reference-count": 35,
  "publisher": "AIP Publishing",
  "issue": "6",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        9,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Combining scanning electron microscopy and electron-beam-induced current imaging with transport measurements, it is shown that the current flowing across a two-terminal oxide-based capacitor-like structure is preferentially confined in areas localized at defects. As the thin-film device switches between two different resistance states, the distribution and intensity of the current paths, appearing as bright spots, change. This implies that switching and memory effects are mainly determined by the conducting properties along such paths. A model based on the storage and release of charge carriers within the insulator seems adequate to explain the observed memory effect.</jats:p>",
  "DOI": "10.1063/1.1389522",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T14:13:37Z",
    "timestamp": 1027692817000
  },
  "page": "2892-2898",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 191,
  "title": "Electrical current distribution across a metal\u2013insulator\u2013metal structure during bistable switching",
  "prefix": "10.1063",
  "volume": "90",
  "author": [
    {
      "given": "C.",
      "family": "Rossel",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM Research, Zurich Research Laboratory, CH-8803\u2009R\u00fcschlikon, Switzerland"
        }
      ]
    },
    {
      "given": "G. I.",
      "family": "Meijer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research, Zurich Research Laboratory, CH-8803\u2009R\u00fcschlikon, Switzerland"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Br\u00e9maud",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research, Zurich Research Laboratory, CH-8803\u2009R\u00fcschlikon, Switzerland"
        }
      ]
    },
    {
      "given": "D.",
      "family": "Widmer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Research, Zurich Research Laboratory, CH-8803\u2009R\u00fcschlikon, Switzerland"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020618551074800_r1",
      "first-page": "1469",
      "volume": "36",
      "year": "1968",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020618551074800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "195",
      "DOI": "10.1109/T-ED.1973.17628",
      "volume": "20",
      "year": "1973",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020618551074800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "243c",
      "DOI": "10.1149/1.2425380",
      "volume": "109",
      "year": "1962",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020618551074800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "5076",
      "DOI": "10.1063/1.1659895",
      "volume": "42",
      "year": "1971",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020618551074800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "106",
      "DOI": "10.1063/1.1754187",
      "volume": "6",
      "year": "1965",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020618551074800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "828",
      "DOI": "10.1116/1.1492715",
      "volume": "6",
      "year": "1969",
      "journal-title": "J. Vac. Sci. Technol."
    },
    {
      "key": "2024020618551074800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "184",
      "DOI": "10.1063/1.1713870",
      "volume": "36",
      "year": "1965",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020618551074800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "535",
      "DOI": "10.1016/0038-1101(68)90092-0",
      "volume": "11",
      "year": "1968",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020618551074800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "785",
      "DOI": "10.1016/0038-1101(64)90131-5",
      "volume": "7",
      "year": "1964",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020618551074800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "93",
      "DOI": "10.1063/1.122962",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020618551074800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1780",
      "DOI": "10.1103/PhysRevLett.84.1780",
      "volume": "84",
      "year": "2000",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024020618551074800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "211",
      "DOI": "10.1080/10587259608034075",
      "volume": "275",
      "year": "1996",
      "journal-title": "Mol. Cryst. Liq. Cryst."
    },
    {
      "key": "2024020618551074800_r13",
      "first-page": "966",
      "volume": "34",
      "year": "1993",
      "journal-title": "J. Struct. Chem."
    },
    {
      "key": "2024020618551074800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "139",
      "DOI": "10.1063/1.126902",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020618551074800_r15"
    },
    {
      "key": "2024020618551074800_r16"
    },
    {
      "key": "2024020618551074800_r17",
      "doi-asserted-by": "crossref",
      "first-page": "717",
      "DOI": "10.1063/1.94037",
      "volume": "42",
      "year": "1983",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020618551074800_r18",
      "doi-asserted-by": "crossref",
      "first-page": "959",
      "DOI": "10.1109/16.293308",
      "volume": "41",
      "year": "1994",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020618551074800_r18a",
      "doi-asserted-by": "crossref",
      "first-page": "1529",
      "DOI": "10.1149/1.1391799",
      "volume": "146",
      "year": "1999",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020618551074800_r19",
      "first-page": "295",
      "volume": "63\u201364",
      "year": "1998",
      "journal-title": "Solid State Phenom."
    },
    {
      "key": "2024020618551074800_r20",
      "doi-asserted-by": "crossref",
      "first-page": "2240",
      "DOI": "10.1063/1.110539",
      "volume": "63",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020618551074800_r21",
      "first-page": "1878",
      "volume": "130",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc., Solid State Sci. Technol."
    },
    {
      "key": "2024020618551074800_r22",
      "doi-asserted-by": "crossref",
      "first-page": "472",
      "DOI": "10.1103/PhysRev.75.472",
      "volume": "75",
      "year": "1949",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020618551074800_r23",
      "doi-asserted-by": "crossref",
      "first-page": "315",
      "DOI": "10.1103/RevModPhys.72.315",
      "volume": "72",
      "year": "2000",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "2024020618551074800_r24"
    },
    {
      "key": "2024020618551074800_r25"
    },
    {
      "key": "2024020618551074800_r26",
      "first-page": "1645",
      "volume": "73",
      "year": "1990",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020618551074800_r26a",
      "first-page": "1654",
      "volume": "73",
      "year": "1990",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020618551074800_r27",
      "first-page": "2234",
      "volume": "72",
      "year": "1989",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020618551074800_r28",
      "doi-asserted-by": "crossref",
      "first-page": "2359",
      "DOI": "10.1063/1.366045",
      "volume": "82",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020618551074800_r29",
      "doi-asserted-by": "crossref",
      "first-page": "66",
      "DOI": "10.1016/S0040-6090(96)09508-9",
      "volume": "305",
      "year": "1997",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020618551074800_r30",
      "doi-asserted-by": "crossref",
      "first-page": "1239",
      "DOI": "10.1023/A:1004333911324",
      "volume": "33",
      "year": "1998",
      "journal-title": "J. Mater. Sci."
    },
    {
      "key": "2024020618551074800_r31",
      "first-page": "1663",
      "volume": "73",
      "year": "1990",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020618551074800_r32",
      "doi-asserted-by": "crossref",
      "first-page": "77",
      "DOI": "10.1098/rspa.1967.0191",
      "volume": "301",
      "year": "1967",
      "journal-title": "Proc. R. Soc. London, Ser. A"
    },
    {
      "key": "2024020618551074800_r33"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/90/6/2892/19239628/2892_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/90/6/2892/19239628/2892_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        6
      ]
    ],
    "date-time": "2024-02-06T23:18:13Z",
    "timestamp": 1707261493000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/90/6/2892/291172/Electrical-current-distribution-across-a-metal"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        9,
        15
      ]
    ]
  },
  "references-count": 35,
  "journal-issue": {
    "issue": "6",
    "published-print": {
      "date-parts": [
        [
          2001,
          9,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1389522",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        9,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        9,
        15
      ]
    ]
  }
}