DOI: 10.1063/1.1385190. Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices

10.1063/1.1385190

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

This letter describes the fabrication and structural and electrical characterization of an aerosol-nanocrystal-based floating-gate field-effect-transistor nonvolatile memory. Aerosol nanocrystal nonvolatile memory devices demonstrate program/erase characteristics comparable to conventional stacked-gate nonvolatile memory devices. Aerosol nanocrystal devices with 0.2 μm channel lengths exhibit large threshold voltage shifts (&gt;3 V), submicrosecond program times, millisecond erase times, excellent endurance (&gt;105 program/erase cycles), and long-term nonvolatility (&gt;106 s) despite thin tunnel oxides (55–60 Å). In addition, a simple aerosol fabrication and deposition process makes the aerosol nanocrystal memory device an attractive candidate for low-cost nonvolatile memory applications.

Bibliography

Ostraat, M. L., De Blauwe, J. W., Green, M. L., Bell, L. D., Brongersma, M. L., Casperson, J., Flagan, R. C., & Atwater, H. A. (2001). Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices. Applied Physics Letters, 79(3), 433â435.

Authors 8

M. L. Ostraat (first)
J. W. De Blauwe (additional)
M. L. Green (additional)
L. D. Bell (additional)
M. L. Brongersma (additional)
J. Casperson (additional)
R. C. Flagan (additional)
H. A. Atwater (additional)

References 7 Referenced 151

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{'key': '2024020320263692700_r2'}
10.1109/16.310117 / IEEE Trans. Electron Devices (1994)
10.1109/16.535349 / IEEE Trans. Electron Devices (1996)
10.1063/1.117421 / Appl. Phys. Lett. (1996)
10.1149/1.1360210 / J. Electrochem. Soc. (2001)
{'key': '2024020320263692700_r7'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 3:26 p.m.)
Indexed	4 months, 1 week ago (April 26, 2025, 1:24 p.m.)
Issued	24 years, 1 month ago (July 16, 2001)
Published	24 years, 1 month ago (July 16, 2001)
Published Print	24 years, 1 month ago (July 16, 2001)

Funders 0

None

BibTeX

@article{Ostraat_2001, title={Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1385190}, DOI={10.1063/1.1385190}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ostraat, M. L. and De Blauwe, J. W. and Green, M. L. and Bell, L. D. and Brongersma, M. L. and Casperson, J. and Flagan, R. C. and Atwater, H. A.}, year={2001}, month=jul, pages={433–435} }

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