Abstract
3d-transition-metal-doped ZnO films (n-type Zn1−xMxO (x=0.05–0.25): M=Co, Mn, Cr, Ni) are formed on sapphire substrates using a pulsed-laser deposition technique, and their magnetic and electric properties are examined. The Co-doped ZnO films showed the maximum solubility limit. Some of the Co-doped ZnO films exhibit ferromagnetic behaviors with the Curie temperature higher than room temperature. The magnetic properties of Co-doped ZnO films depend on the concentration of Co ions and carriers.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:44 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 3:34 p.m.) |
Indexed | 6 days, 5 hours ago (Aug. 30, 2025, 12:31 p.m.) |
Issued | 24 years ago (Aug. 13, 2001) |
Published | 24 years ago (Aug. 13, 2001) |
Published Print | 24 years ago (Aug. 13, 2001) |
@article{Ueda_2001, title={Magnetic and electric properties of transition-metal-doped ZnO films}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1384478}, DOI={10.1063/1.1384478}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ueda, Kenji and Tabata, Hitoshi and Kawai, Tomoji}, year={2001}, month=aug, pages={988–990} }