DOI: 10.1063/1.1383268. Structure and stability of La2O3/SiO2 layers on Si(001)

Structure and stability of La2O3/SiO2 layers on Si(001)

10.1063/1.1383268

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) were used to investigate La2O3/SiO2/Si structures. The La2O3 layers were deposited on thermal SiO2 on silicon, followed by rapid thermal annealing treatments at 600 °C and 800 °C in a nitrogen ambient. After annealing at 600 °C, the oxide layers were amorphous. After an 800 °C treatment, crystallites appeared in the original La2O3 layer, and the total oxide layer thickness increased by 17%, most likely due to the oxygen diffusion and reaction at the Si/SiO2 interface. EELS, using a 0.2 nm probe, showed that rapid thermal annealing at 600 °C did not cause significant La diffusion into the SiO2 layer, whereas some intermixing was observed at 800 °C. We use the observed microstructures to estimate equivalent oxide thicknesses. The results demonstrate that oxygen partial pressures and initial SiO2 thickness need to be carefully controlled to control SiO2 formation at the Si interface and to achieve target equivalent oxide thickness.

Bibliography

Stemmer, S., Maria, J.-P., & Kingon, A. I. (2001). Structure and stability of La2O3/SiO2 layers on Si(001). Applied Physics Letters, 79(1), 102â104.

Authors 3

S. Stemmer (first)
J.-P. Maria (additional)
A. I. Kingon (additional)

References 16 Referenced 80

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:24 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 5:34 p.m.)
Issued	24 years, 1 month ago (July 2, 2001)
Published	24 years, 1 month ago (July 2, 2001)
Published Print	24 years, 1 month ago (July 2, 2001)

Funders 0

None

BibTeX

@article{Stemmer_2001, title={Structure and stability of La2O3/SiO2 layers on Si(001)}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1383268}, DOI={10.1063/1.1383268}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Stemmer, S. and Maria, J.-P. and Kingon, A. I.}, year={2001}, month=jul, pages={102–104} }

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