Abstract
We have investigated the formation energies and electronic structure of native defects in ZnO by a first-principles plane-wave pseudopotential method. When p-type conditions are assumed, the formation energies of donor-type defects can be quite low. The effect of self-compensation by the donor-type defects should be significant in p-type doping. Under n-type conditions, the oxygen vacancy exhibits the lowest formation energy among the donor-type defects. The electronic structure, however, implies that only the zinc interstitial or the zinc antisite can explain the n-type conductivity of undoped ZnO.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:26 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 6, 2024, 9:54 p.m.) |
Indexed | 1 month, 1 week ago (July 19, 2025, 11:22 p.m.) |
Issued | 24 years, 1 month ago (July 15, 2001) |
Published | 24 years, 1 month ago (July 15, 2001) |
Published Print | 24 years, 1 month ago (July 15, 2001) |
@article{Oba_2001, title={Energetics of native defects in ZnO}, volume={90}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1380994}, DOI={10.1063/1.1380994}, number={2}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Oba, Fumiyasu and Nishitani, Shigeto R. and Isotani, Seiji and Adachi, Hirohiko and Tanaka, Isao}, year={2001}, month=jul, pages={824–828} }