Abstract
We demonstrate a large-area fabrication of hexagonally ordered metal dot arrays with an area density of ∼1011/cm2. We produced 20 nm dots with a 40 nm period by combining block copolymer nanolithography and a trilayer resist technique. A self-assembled spherical-phase block copolymer top layer spontaneously generated the pattern, acting as a template. The pattern was first transferred to a silicon nitride middle layer by reactive ion etch, producing holes. The nitride layer was then used as a mask to further etch into a polyimide bottom layer. The metal dots were produced by an electron beam evaporation followed by a lift-off process. Our method provides a viable route for highly dense nanoscale patterning of different materials on arbitrary surfaces.
References
29
Referenced
156
10.1126/science.1962191
/ Science (1991)10.1126/science.270.5240.1335
/ Science (1995)10.1126/science.251.4996.898
/ Science (1991)10.1146/annurev.pc.41.100190.002521
/ Annu. Rev. Phys. Chem. (1990)10.1126/science.276.5317.1401
/ Science (1997){'key': '2024020320251470700_r4', 'first-page': '544', 'volume': '16', 'year': '1998', 'journal-title': 'J. Vac. Sci. Technol. B'}
/ J. Vac. Sci. Technol. B (1998)10.1063/1.126137
/ Appl. Phys. Lett. (2000){'key': '2024020320251470700_r6', 'first-page': '42', 'volume': '35', 'year': '1998', 'journal-title': 'IEEE Spectr.'}
/ IEEE Spectr. (1998)10.1109/5.573754
/ Proc. IEEE (1997)10.1103/PhysRevLett.72.2117
/ Phys. Rev. Lett. (1994)10.1093/nar/22.3.492
/ Nucleic Acids Res. (1994)10.5254/1.3547458
/ Rubber Chem. Technol. (1975)10.1116/1.570256
/ J. Vac. Sci. Technol. (1979)10.1116/1.571265
/ J. Vac. Sci. Technol. (1981)10.1116/1.571731
/ J. Vac. Sci. Technol. (1982)10.1116/1.583258
/ J. Vac. Sci. Technol. B (1985){'key': '2024020320251470700_r12'}
{'key': '2024020320251470700_r13'}
{'key': '2024020320251470700_r14'}
{'key': '2024020320251470700_r15', 'first-page': '179', 'volume': '461', 'year': '1997', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'}
/ Mater. Res. Soc. Symp. Proc. (1997){'key': '2024020320251470700_r16'}
{'key': '2024020320251470700_r17'}
{'key': '2024020320251470700_r18'}
{'key': '2024020320251470700_r19'}
{'key': '2024020320251470700_r20'}
{'key': '2024020320251470700_r21'}
10.1063/1.110628
/ Appl. Phys. Lett. (1993)10.1103/PhysRevLett.49.405
/ Phys. Rev. Lett. (1982)10.1103/PhysRevLett.71.3850
/ Phys. Rev. Lett. (1993)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:18 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 3:25 p.m.) |
Indexed | 4 months ago (April 23, 2025, 4:06 a.m.) |
Issued | 24 years, 1 month ago (July 9, 2001) |
Published | 24 years, 1 month ago (July 9, 2001) |
Published Print | 24 years, 1 month ago (July 9, 2001) |
@article{Park_2001, title={Large area dense nanoscale patterning of arbitrary surfaces}, volume={79}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1378046}, DOI={10.1063/1.1378046}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, Miri and Chaikin, P. M. and Register, Richard A. and Adamson, Douglas H.}, year={2001}, month=jul, pages={257–259} }