DOI: 10.1063/1.1375803. Electrical characterization of an operating Si <i>pn</i>-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy

10.1063/1.1375803

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Electrical characterization of an operating pn-junction diode is performed with scanning capacitance microscopy (SCM) and Kelvin probe force microscopy (KPFM) with submicron scale resolution. We image the spatial distribution of the carrier density inside a diode with SCM and the potential distribution on the surface of the operating diode with KPFM. The surface potential distribution measured at reverse bias is different from that in bulk. The potential drop is extended deep into a lightly p-doped region at reverse bias. The positive fixed oxide charge of 1–2×1011/cm2 would explain the modified potential drop: A known detrimental effect in such a device. The potential distribution at forward bias is nearly bulklike. The potential drops only near the metal–semiconductor junction.

Bibliography

Buh, G. H., Chung, H. J., Yi, J. H., Yoon, I. T., & Kuk, Y. (2001). Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy. Journal of Applied Physics, 90(1), 443â448.

Authors 5

G. H. Buh (first)
H. J. Chung (additional)
J. H. Yi (additional)
I. T. Yoon (additional)
Y. Kuk (additional)

References 17 Referenced 35

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{'key': '2024020602291282300_r2'}
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{'key': '2024020602291282300_r12'}
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{'key': '2024020602291282300_r17'}

Dates

Type	When
Created	23 years ago (July 26, 2002, 10:18 a.m.)
Deposited	1 year, 6 months ago (Feb. 5, 2024, 9:29 p.m.)
Indexed	11 months, 3 weeks ago (Aug. 31, 2024, 1:08 p.m.)
Issued	24 years, 1 month ago (July 1, 2001)
Published	24 years, 1 month ago (July 1, 2001)
Published Print	24 years, 1 month ago (July 1, 2001)

Funders 0

None

BibTeX

@article{Buh_2001, title={Electrical characterization of an operating Si pn-junction diode with scanning capacitance microscopy and Kelvin probe force microscopy}, volume={90}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1375803}, DOI={10.1063/1.1375803}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Buh, G. H. and Chung, H. J. and Yi, J. H. and Yoon, I. T. and Kuk, Y.}, year={2001}, month=jul, pages={443–448} }

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