Abstract
A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 μm. Transmission measurements reveal a stopband centered at 1.0 μm with a maximum attenuation of 10 dB for the submicron (a=0.5 μm) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:17 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 3:03 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 3:40 p.m.) |
Issued | 24 years, 3 months ago (May 14, 2001) |
Published | 24 years, 3 months ago (May 14, 2001) |
Published Print | 24 years, 3 months ago (May 14, 2001) |
@article{Sabarinathan_2001, title={Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1372198}, DOI={10.1063/1.1372198}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sabarinathan, Jayshri and Bhattacharya, Pallab and Zhu, Donghai and Kochman, Boaz and Zhou, Weidong and Yu, Pei-Chen}, year={2001}, month=may, pages={3024–3026} }