Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

GaN layers are grown on sapphire substrates with AlN buffer layers by the metalorganic chemical vapor deposition method. GaN layers are doped with Si. The electron density of the n-type GaN is 2×1017 cm−3. It is found that the GaN surface is etched with hydrogen (H2) plasma produced by supplying microwave power leading to the formation of the roughened surface of GaN. A variation in the surface morphology occurs due to microwave power and gas pressure. Field emission measurements are carried out for GaN with various surface morphologies. It is observed that the turn-on electric field decreases with increasing surface roughness of the GaN. A turn-on electric field of the electron emission is estimated to be as low as 12.4 V/μm.

Bibliography

Sugino, T., Hori, T., Kimura, C., & Yamamoto, T. (2001). Field emission from GaN surfaces roughened by hydrogen plasma treatment. Applied Physics Letters, 78(21), 3229–3231.

Authors 4
  1. Takashi Sugino (first)
  2. Takamitsu Hori (additional)
  3. Chiharu Kimura (additional)
  4. Tomohide Yamamoto (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 10:17 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 3:08 p.m.)
Indexed 11 months, 3 weeks ago (Aug. 29, 2024, 1:49 p.m.)
Issued 24 years, 3 months ago (May 21, 2001)
Published 24 years, 3 months ago (May 21, 2001)
Published Print 24 years, 3 months ago (May 21, 2001)
Funders 0

None

@article{Sugino_2001, title={Field emission from GaN surfaces roughened by hydrogen plasma treatment}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1370979}, DOI={10.1063/1.1370979}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sugino, Takashi and Hori, Takamitsu and Kimura, Chiharu and Yamamoto, Tomohide}, year={2001}, month=may, pages={3229–3231} }