DOI: 10.1063/1.1369387. Charge dynamics in silicon nitride/silicon oxide double layers

Charge dynamics in silicon nitride/silicon oxide double layers

10.1063/1.1369387

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Transport of positive charge deposited by a corona discharge on the open nitride surface of a silicon nitride (150 nm)/silicon oxide (300 nm) double layer on silicon substrate is studied by determining the location of the charge centroid with a capacitance–voltage method used in conjunction with surface-potential measurements. At temperatures of about 400 °C, the charge is mobile in the nitride and a large part of it is eventually trapped at the nitride/oxide interface while some of the charge reaches the substrate through the oxide. Indications are that at this temperature the mean free path of positive charges in the nitride and oxide layers is comparable to the layer thicknesses, but much shorter in the nitride at lower temperatures.

Bibliography

Zhang, X., & Sessler, G. M. (2001). Charge dynamics in silicon nitride/silicon oxide double layers. Applied Physics Letters, 78(18), 2757â2759.

Authors 2

Xiaoqing Zhang (first)
Gerhard M. Sessler (additional)

References 12 Referenced 23

10.1109/94.822027 / IEEE Trans. Dielectr. Electr. Insul. (1999)
10.1063/1.371121 / J. Appl. Phys. (1999)
10.1063/1.334071 / J. Appl. Phys. (1984)
10.1109/94.625648 / IEEE Trans. Dielectr. Electr. Insul. (1997)
{'key': '2024020320015717700_r5'}
10.1002/pssa.2211220128 / Phys. Status Solidi A (1990)
10.1109/14.155785 / IEEE Trans. Dielectr. Electr. Insul. (1992)
{'key': '2024020320015717700_r8'}
{'key': '2024020320015717700_r9'}
{'key': '2024020320015717700_r10'}
10.1109/94.536727 / IEEE Trans. Dielectr. Electr. Insul. (1996)
10.1063/1.354992 / J. Appl. Phys. (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:16 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 3:02 p.m.)
Indexed	1 week, 1 day ago (Aug. 23, 2025, 9:19 p.m.)
Issued	24 years, 4 months ago (April 30, 2001)
Published	24 years, 4 months ago (April 30, 2001)
Published Print	24 years, 4 months ago (April 30, 2001)

Funders 0

None

BibTeX

@article{Zhang_2001, title={Charge dynamics in silicon nitride/silicon oxide double layers}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1369387}, DOI={10.1063/1.1369387}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Xiaoqing and Sessler, Gerhard M.}, year={2001}, month=apr, pages={2757–2759} }

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