DOI: 10.1063/1.1367315. Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO

Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO

10.1063/1.1367315

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

An ultraviolet light-emitting diode (UV-LED) was realized using a p-n heterojunction composed of the transparent oxide semiconductors p-SrCu2O2 and n-ZnO. A Ni/SrCu2O2/ZnO/ITO multilayered film was epitaxially grown on an extremely flat YSZ (111) surface by a pulsed-laser deposition technique. SrCu2O2 (112) was preferentially grown on ZnO (0001) at 350°C, while the preferential plane was changed into the (100) when the temperature was increased to 600 °C. The grown films were processed by conventional photolithography followed by reactive ion etching to fabricate heterojunction diodes. The resulting devices exhibited rectifying I-V characteristics inherent to p-n junctions. A relatively sharp electroluminescence band centered at 382 nm, attributed to transitions associated with exciton-exciton collision or electron-hole plasma in ZnO, was generated by applying a forward bias voltage greater than the turn-on voltage of 3 V. UV-LED performance characteristics such as threshold current and conversion efficiency improved with higher SrCu2O2 deposition temperatures. On the other hand, increased laser power density at 600 °C during deposition raised the incidence of insulating layer formation between the p and n layers, probably due to migration of K+ ions doped as an acceptor impurity. The resulting p-i-n diode emits broad luminescence centered at 500 nm for forward voltage greater than 14 V.

Bibliography

Ohta, H., Orita, M., Hirano, M., & Hosono, H. (2001). Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO. Journal of Applied Physics, 89(10), 5720â5725.

Authors 4

Hiromichi Ohta (first)
Masahiro Orita (additional)
Masahiro Hirano (additional)
Hideo Hosono (additional)

References 17 Referenced 156

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Dates

Type	When
Created	23 years ago (July 26, 2002, 10:17 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 1:49 p.m.)
Indexed	1 year, 1 month ago (June 30, 2024, 12:29 p.m.)
Issued	24 years, 3 months ago (May 15, 2001)
Published	24 years, 3 months ago (May 15, 2001)
Published Print	24 years, 3 months ago (May 15, 2001)

Funders 0

None

BibTeX

@article{Ohta_2001, title={Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu2O2 and n-ZnO}, volume={89}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1367315}, DOI={10.1063/1.1367315}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ohta, Hiromichi and Orita, Masahiro and Hirano, Masahiro and Hosono, Hideo}, year={2001}, month=may, pages={5720–5725} }

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