Abstract
To obtain various paraelectric ZrTiO4 thin-film microstructures, the films were synthesized at different deposition temperatures using rf magnetron sputtering. Both the dielectric losses (tan δ) and dielectric constants (ε) of the ZrTiO4 thin films were measured up to 6 GHz using a circular-patch capacitor geometry. The films showed enhanced crystallinity with increasing deposition temperature, as determined from the x-ray diffraction peak widths at various scattering vectors. The microwave dielectric losses correlated very well with the level of crystallinity or strain, while the dielectric constants did not alter significantly.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:16 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 2:53 p.m.) |
Indexed | 3 months, 2 weeks ago (May 19, 2025, 12:26 p.m.) |
Issued | 24 years, 4 months ago (April 16, 2001) |
Published | 24 years, 4 months ago (April 16, 2001) |
Published Print | 24 years, 4 months ago (April 16, 2001) |
@article{Kim_2001, title={Effect of microstructures on the microwave dielectric properties of ZrTiO4 thin films}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1366359}, DOI={10.1063/1.1366359}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, Yongjo and Oh, Jeongmin and Kim, Tae-Gon and Park, Byungwoo}, year={2001}, month=apr, pages={2363–2365} }