DOI: 10.1063/1.1365410. Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition

Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition

10.1063/1.1365410

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42 000 S/cm with mobility of 609 cm2/V s is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.

Bibliography

Yan, M., Lane, M., Kannewurf, C. R., & Chang, R. P. H. (2001). Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition. Applied Physics Letters, 78(16), 2342â2344.

Authors 4

M. Yan (first)
M. Lane (additional)
C. R. Kannewurf (additional)
R. P. H. Chang (additional)

References 22 Referenced 328

10.1016/0040-6090(94)90871-0 / Thin Solid Films (1994)
10.1016/0040-6090(94)90853-2 / Thin Solid Films (1994)
10.1016/0040-6090(94)90831-1 / Thin Solid Films (1994)
10.1143/JJAP.8.681 / Jpn. J. Appl. Phys. (1969)
10.1016/S0042-207X(97)00019-5 / Vacuum (1997)
{'key': '2024020319554441400_r6', 'first-page': '45', 'volume': '25', 'year': '2000', 'journal-title': 'MRS Bull.'} / MRS Bull. (2000)
10.1139/p71-055 / Can. J. Phys. (1971)
{'key': '2024020319554441400_r8', 'first-page': '698', 'volume': '20', 'year': '1972', 'journal-title': 'Rev. Electr. Commun. Lab.'} / Rev. Electr. Commun. Lab. (1972)
{'key': '2024020319554441400_r9', 'first-page': '905', 'volume': '60', 'year': '1956', 'journal-title': 'Z. Elektrochem.'} / Z. Elektrochem. (1956)
10.1016/0022-3697(60)90175-X / J. Phys. Chem. Solids (1960)
10.1063/1.1777147 / J. Appl. Phys. (1962)
10.1016/0022-4596(70)90066-6 / J. Solid State Chem. (1970)
10.1116/1.580429 / J. Vac. Sci. Technol. A (1997)
10.1007/BF01567122 / Appl. Phys. A: Mater. Sci. Process. (1996)
10.1063/1.330619 / J. Appl. Phys. (1982)
10.1016/0040-6090(89)90892-4 / Thin Solid Films (1989)
10.1103/PhysRevB.55.13213 / Phys. Rev. B (1997)
10.1109/19.2668 / IEEE Trans. Instrum. Meas. (1988)
{'key': '2024020319554441400_r19'}
10.1063/1.91208 / Appl. Phys. Lett. (1979)
10.1063/1.321593 / J. Appl. Phys. (1975)
10.1103/PhysRev.93.632 / Phys. Rev. (1954)

Dates

Type	When
Created	23 years ago (July 26, 2002, 10:16 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:55 p.m.)
Indexed	1 month, 1 week ago (July 16, 2025, 9:26 a.m.)
Issued	24 years, 4 months ago (April 16, 2001)
Published	24 years, 4 months ago (April 16, 2001)
Published Print	24 years, 4 months ago (April 16, 2001)

Funders 0

None

BibTeX

@article{Yan_2001, title={Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1365410}, DOI={10.1063/1.1365410}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yan, M. and Lane, M. and Kannewurf, C. R. and Chang, R. P. H.}, year={2001}, month=apr, pages={2342–2344} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        16
      ]
    ],
    "date-time": "2025-07-16T13:26:58Z",
    "timestamp": 1752672418209
  },
  "reference-count": 22,
  "publisher": "AIP Publishing",
  "issue": "16",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        4,
        16
      ]
    ]
  },
  "abstract": "<jats:p>Epitaxial growth of both pure and doped CdO thin films has been achieved on MgO (111) substrates using pulsed laser deposition. A maximum conductivity of 42\u200a000 S/cm with mobility of 609 cm2/V\u200as is achieved when the CdO epitaxial film is doped with 2.5% Sn. The pure CdO epitaxial film has a band gap of 2.4 eV. The band gap increases with doping and reaches a maximum of 2.87 eV when the doping level is 6.2%. Both grain boundary scattering and ionized impurity scattering are found to contribute to the mobility of CdO films.</jats:p>",
  "DOI": "10.1063/1.1365410",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T14:16:02Z",
    "timestamp": 1027692962000
  },
  "page": "2342-2344",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 328,
  "title": "Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition",
  "prefix": "10.1063",
  "volume": "78",
  "author": [
    {
      "given": "M.",
      "family": "Yan",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Materials Research Center, Northwestern University, Evanston, Illinois\u200960208"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Lane",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Research Center, Northwestern University, Evanston, Illinois\u200960208"
        }
      ]
    },
    {
      "given": "C. R.",
      "family": "Kannewurf",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Research Center, Northwestern University, Evanston, Illinois\u200960208"
        }
      ]
    },
    {
      "given": "R. P. H.",
      "family": "Chang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Research Center, Northwestern University, Evanston, Illinois\u200960208"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020319554441400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "17",
      "DOI": "10.1016/0040-6090(94)90871-0",
      "volume": "245",
      "year": "1994",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319554441400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "211",
      "DOI": "10.1016/0040-6090(94)90853-2",
      "volume": "239",
      "year": "1994",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319554441400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "7",
      "DOI": "10.1016/0040-6090(94)90831-1",
      "volume": "251",
      "year": "1994",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319554441400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "681",
      "DOI": "10.1143/JJAP.8.681",
      "volume": "8",
      "year": "1969",
      "journal-title": "Jpn. J. Appl. Phys."
    },
    {
      "key": "2024020319554441400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "565",
      "DOI": "10.1016/S0042-207X(97)00019-5",
      "volume": "48",
      "year": "1997",
      "journal-title": "Vacuum"
    },
    {
      "key": "2024020319554441400_r6",
      "first-page": "45",
      "volume": "25",
      "year": "2000",
      "journal-title": "MRS Bull."
    },
    {
      "key": "2024020319554441400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "435",
      "DOI": "10.1139/p71-055",
      "volume": "49",
      "year": "1971",
      "journal-title": "Can. J. Phys."
    },
    {
      "key": "2024020319554441400_r8",
      "first-page": "698",
      "volume": "20",
      "year": "1972",
      "journal-title": "Rev. Electr. Commun. Lab."
    },
    {
      "key": "2024020319554441400_r9",
      "first-page": "905",
      "volume": "60",
      "year": "1956",
      "journal-title": "Z. Elektrochem."
    },
    {
      "key": "2024020319554441400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "57",
      "DOI": "10.1016/0022-3697(60)90175-X",
      "volume": "17",
      "year": "1960",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020319554441400_r11",
      "doi-asserted-by": "crossref",
      "first-page": "487",
      "DOI": "10.1063/1.1777147",
      "volume": "33",
      "year": "1962",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319554441400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "176",
      "DOI": "10.1016/0022-4596(70)90066-6",
      "volume": "2",
      "year": "1970",
      "journal-title": "J. Solid State Chem."
    },
    {
      "key": "2024020319554441400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1057",
      "DOI": "10.1116/1.580429",
      "volume": "15",
      "year": "1997",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020319554441400_r14",
      "doi-asserted-by": "crossref",
      "first-page": "487",
      "DOI": "10.1007/BF01567122",
      "volume": "62",
      "year": "1996",
      "journal-title": "Appl. Phys. A: Mater. Sci. Process."
    },
    {
      "key": "2024020319554441400_r15",
      "doi-asserted-by": "crossref",
      "first-page": "1615",
      "DOI": "10.1063/1.330619",
      "volume": "53",
      "year": "1982",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319554441400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "217",
      "DOI": "10.1016/0040-6090(89)90892-4",
      "volume": "174",
      "year": "1989",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319554441400_r17",
      "doi-asserted-by": "crossref",
      "first-page": "13213",
      "DOI": "10.1103/PhysRevB.55.13213",
      "volume": "55",
      "year": "1997",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020319554441400_r18",
      "doi-asserted-by": "crossref",
      "first-page": "76",
      "DOI": "10.1109/19.2668",
      "volume": "37",
      "year": "1988",
      "journal-title": "IEEE Trans. Instrum. Meas."
    },
    {
      "key": "2024020319554441400_r19"
    },
    {
      "key": "2024020319554441400_r20",
      "doi-asserted-by": "crossref",
      "first-page": "542",
      "DOI": "10.1063/1.91208",
      "volume": "35",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319554441400_r21",
      "doi-asserted-by": "crossref",
      "first-page": "5247",
      "DOI": "10.1063/1.321593",
      "volume": "46",
      "year": "1975",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319554441400_r22",
      "doi-asserted-by": "crossref",
      "first-page": "632",
      "DOI": "10.1103/PhysRev.93.632",
      "volume": "93",
      "year": "1954",
      "journal-title": "Phys. Rev."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/16/2342/18556964/2342_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/16/2342/18556964/2342_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T19:55:54Z",
    "timestamp": 1706990154000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/78/16/2342/113033/Highly-conductive-epitaxial-CdO-thin-films"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        4,
        16
      ]
    ]
  },
  "references-count": 22,
  "journal-issue": {
    "issue": "16",
    "published-print": {
      "date-parts": [
        [
          2001,
          4,
          16
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1365410",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        4,
        16
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        4,
        16
      ]
    ]
  }
}