DOI: 10.1063/1.1365061. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs

10.1063/1.1365061

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The band-gap (Egp) and valence band offset (ΔEv) energies of pseudomorphic GaAsSb layers on GaAs substrate are determined from temperature-dependent photoluminescence measurements on GaAsSb/GaAs and GaAsSb/GaAlAs quantum wells grown by molecular beam epitaxy. A clear evidence of staggered type-II band alignment of GaAsSb relative to GaAs and a value of 1.05 for the valence band offset ratio (Qv) are proposed. Finally, through a detailed comparison of these values with those published previously, we have shown that the scatter in Qv found in the literature (&lt;1 to 2.1) is closely dependent on the exact determination of Egp. Particularly, we have shown that the strain dependence of the deformation potential is important in the calculation of the strain energy contribution to Egp.

Bibliography

Teissier, R., Sicault, D., Harmand, J. C., Ungaro, G., Le Roux, G., & Largeau, L. (2001). Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs. Journal of Applied Physics, 89(10), 5473â5477.

Authors 6

R. Teissier (first)
D. Sicault (additional)
J. C. Harmand (additional)
G. Ungaro (additional)
G. Le Roux (additional)
L. Largeau (additional)

References 16 Referenced 112

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{'key': '2024020712141013600_r4', 'first-page': '2191', 'volume': '47', 'year': '1993', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1993)
{'key': '2024020712141013600_r5', 'first-page': '159', 'volume': '3', 'year': '1993', 'journal-title': 'J. Phys. IV'} / J. Phys. IV (1993)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 1:52 p.m.)
Indexed	2 months, 1 week ago (June 19, 2025, 9:49 p.m.)
Issued	24 years, 3 months ago (May 15, 2001)
Published	24 years, 3 months ago (May 15, 2001)
Published Print	24 years, 3 months ago (May 15, 2001)

Funders 0

None

BibTeX

@article{Teissier_2001, title={Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs}, volume={89}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1365061}, DOI={10.1063/1.1365061}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Teissier, R. and Sicault, D. and Harmand, J. C. and Ungaro, G. and Le Roux, G. and Largeau, L.}, year={2001}, month=may, pages={5473–5477} }

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