Abstract
We explored the feasibility of employing strontium titanate (SrTiO3) as semiconducting material in field-effect metal–insulator–semiconductor epitaxial heterostructures. This idea was suggested by the observation of a dramatic effect of the oxygen deficiency on SrTiO3−δ transport properties, which brings about metallic behavior with low-temperature mobility values comparable with those commonly found for silicon. By pulsed-laser deposition, we realized patterned field-effect devices, showing a resistance enhancement up to 90%. This promising result could open perspectives for crystalline-oxide electronics.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:16 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 2:56 p.m.) |
Indexed | 1 year, 4 months ago (April 18, 2024, 6:34 a.m.) |
Issued | 24 years, 4 months ago (April 9, 2001) |
Published | 24 years, 4 months ago (April 9, 2001) |
Published Print | 24 years, 4 months ago (April 9, 2001) |
@article{Pallecchi_2001, title={SrTiO 3 -based metal–insulator–semiconductor heterostructures}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1363690}, DOI={10.1063/1.1363690}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pallecchi, Ilaria and Grassano, Giuseppe and Marré, Daniele and Pellegrino, Luca and Putti, Marina and Siri, Antonio Sergio}, year={2001}, month=apr, pages={2244–2246} }