DOI: 10.1063/1.1362371. Trap engineering in organic hole transport materials

Trap engineering in organic hole transport materials

10.1063/1.1362371

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Chemical impurities with known highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital energies were incorporated in organic hole transport materials. The effect of these dopants on quantity and depth of trap levels, transport properties, and luminescence of organic light emitting devices was examined. This was achieved by investigating current–voltage characteristics, luminance–voltage characteristics, and utilizing the method of thermally stimulated current for trap level detection. It was found that 4,4′,4″-tris-[N-(1-naphthyl)-N-(phenylamino)]triphenylamine (1-NaphDATA) doped into N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine (α-NPD) generates a trap level whose activation energy corresponds to the HOMO energy difference between dopant and matrix molecules. Therefore, the detected electronic states can be assigned to hole traps. The influence of those traps on the charge transport will be reported. For doping α-NPD into 1-NaphDATA no new trap levels could be detected.

Bibliography

von Malm, N., Steiger, J., Schmechel, R., & von Seggern, H. (2001). Trap engineering in organic hole transport materials. Journal of Applied Physics, 89(10), 5559â5563.

Authors 4

N. von Malm (first)
J. Steiger (additional)
R. Schmechel (additional)
H. von Seggern (additional)

References 19 Referenced 71

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10.1016/S0038-1098(96)00714-4 / Solid State Commun. (1997)
10.1016/S0379-6779(97)03969-6 / Synth. Met. (1997)
10.1063/1.124250 / Appl. Phys. Lett. (1999)
10.1109/2944.669481 / IEEE J. Sel. Top. Quantum Electron. (1998)
10.1016/S0040-6090(99)00970-0 / Thin Solid Films (2000)
{'key': '2024020712135656700_r7'}
10.1063/1.122173 / Appl. Phys. Lett. (1998)
{'key': '2024020712135656700_r9', 'first-page': '277', 'volume': '111–112', 'year': '2000', 'journal-title': 'Synth. Met.'} / Synth. Met. (2000)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:26 a.m.)
Deposited	1 year, 6 months ago (Feb. 7, 2024, 1:51 p.m.)
Indexed	5 months, 2 weeks ago (March 19, 2025, 9:51 a.m.)
Issued	24 years, 3 months ago (May 15, 2001)
Published	24 years, 3 months ago (May 15, 2001)
Published Print	24 years, 3 months ago (May 15, 2001)

Funders 0

None

BibTeX

@article{von_Malm_2001, title={Trap engineering in organic hole transport materials}, volume={89}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1362371}, DOI={10.1063/1.1362371}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={von Malm, N. and Steiger, J. and Schmechel, R. and von Seggern, H.}, year={2001}, month=may, pages={5559–5563} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        3,
        19
      ]
    ],
    "date-time": "2025-03-19T13:51:55Z",
    "timestamp": 1742392315964
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "10",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        5,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Chemical impurities with known highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital energies were incorporated in organic hole transport materials. The effect of these dopants on quantity and depth of trap levels, transport properties, and luminescence of organic light emitting devices was examined. This was achieved by investigating current\u2013voltage characteristics, luminance\u2013voltage characteristics, and utilizing the method of thermally stimulated current for trap level detection. It was found that 4,4\u2032,4\u2033-tris-[N-(1-naphthyl)-N-(phenylamino)]triphenylamine (1-NaphDATA) doped into N,N\u2032-di(1-naphthyl)-N,N\u2032-diphenylbenzidine (\u03b1-NPD) generates a trap level whose activation energy corresponds to the HOMO energy difference between dopant and matrix molecules. Therefore, the detected electronic states can be assigned to hole traps. The influence of those traps on the charge transport will be reported. For doping \u03b1-NPD into 1-NaphDATA no new trap levels could be detected.</jats:p>",
  "DOI": "10.1063/1.1362371",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:26:45Z",
    "timestamp": 1027690005000
  },
  "page": "5559-5563",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 71,
  "title": "Trap engineering in organic hole transport materials",
  "prefix": "10.1063",
  "volume": "89",
  "author": [
    {
      "given": "N.",
      "family": "von Malm",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Institute of Materials Science, Darmstadt University of Technology, Darmstadt, Germany"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Steiger",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Materials Science, Darmstadt University of Technology, Darmstadt, Germany"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Schmechel",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Materials Science, Darmstadt University of Technology, Darmstadt, Germany"
        }
      ]
    },
    {
      "given": "H.",
      "family": "von Seggern",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Institute of Materials Science, Darmstadt University of Technology, Darmstadt, Germany"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020712135656700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "3",
      "DOI": "10.1109/2944.669454",
      "volume": "4",
      "year": "1998",
      "journal-title": "IEEE J. Sel. Top. Quantum Electron."
    },
    {
      "key": "2024020712135656700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "259",
      "DOI": "10.1016/S0038-1098(96)00714-4",
      "volume": "102",
      "year": "1997",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024020712135656700_r3",
      "doi-asserted-by": "crossref",
      "first-page": "27",
      "DOI": "10.1016/S0379-6779(97)03969-6",
      "volume": "91",
      "year": "1997",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2024020712135656700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "888",
      "DOI": "10.1063/1.124250",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020712135656700_r5",
      "doi-asserted-by": "crossref",
      "first-page": "119",
      "DOI": "10.1109/2944.669481",
      "volume": "4",
      "year": "1998",
      "journal-title": "IEEE J. Sel. Top. Quantum Electron."
    },
    {
      "key": "2024020712135656700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "6",
      "DOI": "10.1016/S0040-6090(99)00970-0",
      "volume": "363",
      "year": "2000",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020712135656700_r7"
    },
    {
      "key": "2024020712135656700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1457",
      "DOI": "10.1063/1.122173",
      "volume": "73",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020712135656700_r9",
      "first-page": "277",
      "volume": "111\u2013112",
      "year": "2000",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2024020712135656700_r10",
      "first-page": "69",
      "volume": "111\u2013112",
      "year": "2000",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2024020712135656700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "608",
      "DOI": "10.1063/1.369413",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020712135656700_r12",
      "doi-asserted-by": "crossref",
      "first-page": "5274",
      "DOI": "10.1143/JJAP.38.5274",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020712135656700_r13"
    },
    {
      "key": "2024020712135656700_r14",
      "doi-asserted-by": "crossref",
      "first-page": "40",
      "DOI": "10.1109/2944.669464",
      "volume": "4",
      "year": "1998",
      "journal-title": "IEEE J. Sel. Top. Quantum Electron."
    },
    {
      "key": "2024020712135656700_r14a",
      "doi-asserted-by": "crossref",
      "first-page": "4515",
      "DOI": "10.1063/1.371395",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020712135656700_r15",
      "first-page": "366",
      "volume": "184",
      "year": "1945",
      "journal-title": "Proc. R. Soc. London, Ser. A"
    },
    {
      "key": "2024020712135656700_r16",
      "doi-asserted-by": "crossref",
      "first-page": "783",
      "DOI": "10.1088/0508-3443/15/7/302",
      "volume": "15",
      "year": "1964",
      "journal-title": "Br. J. Appl. Phys."
    },
    {
      "key": "2024020712135656700_r17",
      "doi-asserted-by": "crossref",
      "first-page": "87",
      "DOI": "10.1063/1.368004",
      "volume": "84",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020712135656700_r18"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/89/10/5559/19313812/5559_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/89/10/5559/19313812/5559_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        7
      ]
    ],
    "date-time": "2024-02-07T18:51:54Z",
    "timestamp": 1707331914000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/89/10/5559/291329/Trap-engineering-in-organic-hole-transport"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        5,
        15
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "10",
    "published-print": {
      "date-parts": [
        [
          2001,
          5,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1362371",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        5,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        5,
        15
      ]
    ]
  }
}