DOI: 10.1063/1.1361280. Retardation of boron diffusion in silicon by defect engineering

Retardation of boron diffusion in silicon by defect engineering

10.1063/1.1361280

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

By judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si+ ions to produce a surface vacancy-rich region, we studied the diffusion of deposited B on predamaged samples with annealing between 900 and 1010 °C. Boron diffusion retardation was observed in both implantation conditions after low temperature annealing with enhancement occurring in a 50 keV implanted sample at high temperature. Choosing high energy implantation to separate vacancies and interstitials can reduce the boron diffusion significantly. Such suppression became more obvious with higher implant doses. A junction less than 10 nm deep (at 1×1017 cm−3 according to carrier concentration profiles) can be formed.

Bibliography

Shao, L., Lu, X., Wang, X., Rusakova, I., Liu, J., & Chu, W.-K. (2001). Retardation of boron diffusion in silicon by defect engineering. Applied Physics Letters, 78(16), 2321â2323.

Authors 6

Lin Shao (first)
Xinming Lu (additional)
Xuemei Wang (additional)
Irene Rusakova (additional)
Jiarui Liu (additional)
Wei-Kan Chu (additional)

References 13 Referenced 42

{'key': '2024020319570361700_r1'}
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:16 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:57 p.m.)
Indexed	4 days, 23 hours ago (Aug. 23, 2025, 9:24 p.m.)
Issued	24 years, 4 months ago (April 16, 2001)
Published	24 years, 4 months ago (April 16, 2001)
Published Print	24 years, 4 months ago (April 16, 2001)

Funders 0

None

BibTeX

@article{Shao_2001, title={Retardation of boron diffusion in silicon by defect engineering}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1361280}, DOI={10.1063/1.1361280}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shao, Lin and Lu, Xinming and Wang, Xuemei and Rusakova, Irene and Liu, Jiarui and Chu, Wei-Kan}, year={2001}, month=apr, pages={2321–2323} }

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