DOI: 10.1063/1.1355287. Growth and characterization of a novel In2Se3 structure

Growth and characterization of a novel In2Se3 structure

10.1063/1.1355287

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Thin films of In2Se3 deposited by thermal co-evaporation crystallize upon vacuum annealing almost single phase into an, up to now, unknown structure. Only when the films are capped with a thin oxide layer before annealing, the reportedly stable γ-In2Se3 structure, single phase and aligned along the c axis forms. Rutherford backscattering confirms an In to Se ratio of 2 to 3 for both structures. Nevertheless, the new structure has distinct x-ray diffraction peaks and Raman spectra. The new structure has a much lower resistivity than the γ-In2Se3 structure, consistent with its smaller electrical and optical energy gap. Both structures show large photoconductivity.

Bibliography

Groot, C. H. de, & Moodera, J. S. (2001). Growth and characterization of a novel In2Se3 structure. Journal of Applied Physics, 89(8), 4336â4340.

Authors 2

C. H. de Groot (first)
J. S. Moodera (additional)

References 21 Referenced 107

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Dates

Type	When
Created	23 years ago (July 26, 2002, 10:16 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 10:44 p.m.)
Indexed	4 weeks, 1 day ago (July 24, 2025, 8:08 a.m.)
Issued	24 years, 4 months ago (April 15, 2001)
Published	24 years, 4 months ago (April 15, 2001)
Published Print	24 years, 4 months ago (April 15, 2001)

Funders 0

None

BibTeX

@article{Groot_2001, title={Growth and characterization of a novel In2Se3 structure}, volume={89}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1355287}, DOI={10.1063/1.1355287}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Groot, C. H. de and Moodera, J. S.}, year={2001}, month=apr, pages={4336–4340} }

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