DOI: 10.1063/1.1350425. Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers

Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers

10.1063/1.1350425

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol–gel processing. High dielectric constant (330 for stainless steel, 420 for titanium, and 450 for nickel foils), low dielectric loss (&lt;2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C–V characteristics and P–E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict oxide layer formation (i.e., TiOx or NiOx) between the PZT film and the metallic foils during annealing in air.

Bibliography

Zou, Q., Ruda, H. E., & Yacobi, B. G. (2001). Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers. Applied Physics Letters, 78(9), 1282â1284.

Authors 3

Q. Zou (first)
H. E. Ruda (additional)
B. G. Yacobi (additional)

References 11 Referenced 81

10.1109/4.5940 / IEEE J. Solid-State Circuits (1988)
10.1080/00150197108241501 / Ferroelectrics (1971)
10.1080/00150199108007942 / Ferroelectrics (1991)
10.1063/1.115484 / Appl. Phys. Lett. (1995)
10.1080/10584589708019995 / Integr. Ferroelectr. (1997)
10.1143/JJAP.36.6888 / Jpn. J. Appl. Phys., Part 1 (1997)
10.1116/1.579391 / J. Vac. Sci. Technol. A (1995)
10.1117/12.240874 / Proc. SPIE (1996)
10.1063/1.363109 / J. Appl. Phys. (1996)
10.1063/1.1289063 / Appl. Phys. Lett. (2000)
10.1063/1.1289060 / Appl. Phys. Lett. (2000)

Dates

Type	When
Created	23 years ago (July 26, 2002, 10:14 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:40 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 6, 2025, 9:37 a.m.)
Issued	24 years, 5 months ago (Feb. 26, 2001)
Published	24 years, 5 months ago (Feb. 26, 2001)
Published Print	24 years, 5 months ago (Feb. 26, 2001)

Funders 0

None

BibTeX

@article{Zou_2001, title={Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1350425}, DOI={10.1063/1.1350425}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zou, Q. and Ruda, H. E. and Yacobi, B. G.}, year={2001}, month=feb, pages={1282–1284} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T13:37:47Z",
    "timestamp": 1754487467836
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        2,
        26
      ]
    ]
  },
  "abstract": "<jats:p>Improved dielectric properties of lead zirconate titanate (PZT) films deposited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol\u2013gel processing. High dielectric constant (330 for stainless steel, 420 for titanium, and 450 for nickel foils), low dielectric loss (&amp;lt;2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C\u2013V characteristics and P\u2013E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict oxide layer formation (i.e., TiOx or NiOx) between the PZT film and the metallic foils during annealing in air.</jats:p>",
  "DOI": "10.1063/1.1350425",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T14:14:42Z",
    "timestamp": 1027692882000
  },
  "page": "1282-1284",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 81,
  "title": "Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers",
  "prefix": "10.1063",
  "volume": "78",
  "author": [
    {
      "given": "Q.",
      "family": "Zou",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Center for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Canada\u2009M5S\u20093E4"
        }
      ]
    },
    {
      "given": "H. E.",
      "family": "Ruda",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Canada\u2009M5S\u20093E4"
        }
      ]
    },
    {
      "given": "B. G.",
      "family": "Yacobi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Advanced Nanotechnology, University of Toronto, 170 College Street, Toronto, Canada\u2009M5S\u20093E4"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020319401820400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1171",
      "DOI": "10.1109/4.5940",
      "volume": "23",
      "year": "1988",
      "journal-title": "IEEE J. Solid-State Circuits"
    },
    {
      "key": "2024020319401820400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "123",
      "DOI": "10.1080/00150197108241501",
      "volume": "2",
      "year": "1971",
      "journal-title": "Ferroelectrics"
    },
    {
      "key": "2024020319401820400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "195",
      "DOI": "10.1080/00150199108007942",
      "volume": "116",
      "year": "1991",
      "journal-title": "Ferroelectrics"
    },
    {
      "key": "2024020319401820400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "37",
      "DOI": "10.1063/1.115484",
      "volume": "67",
      "year": "1995",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319401820400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "219",
      "DOI": "10.1080/10584589708019995",
      "volume": "14",
      "year": "1997",
      "journal-title": "Integr. Ferroelectr."
    },
    {
      "key": "2024020319401820400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "6888",
      "DOI": "10.1143/JJAP.36.6888",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020319401820400_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1017",
      "DOI": "10.1116/1.579391",
      "volume": "13",
      "year": "1995",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020319401820400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "36",
      "DOI": "10.1117/12.240874",
      "volume": "2718",
      "year": "1996",
      "journal-title": "Proc. SPIE"
    },
    {
      "key": "2024020319401820400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2175",
      "DOI": "10.1063/1.363109",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319401820400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1041",
      "DOI": "10.1063/1.1289063",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319401820400_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1038",
      "DOI": "10.1063/1.1289060",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/9/1282/18555898/1282_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/9/1282/18555898/1282_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T19:40:47Z",
    "timestamp": 1706989247000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/78/9/1282/113556/Improved-dielectric-properties-of-lead-zirconate"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        2,
        26
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          2001,
          2,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1350425",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        2,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        2,
        26
      ]
    ]
  }
}