DOI: 10.1063/1.1347402. Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

10.1063/1.1347402

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si–p-type metal–oxide–semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800 °C in N2. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO2 films was 65.0 μΩ cm after 800 °C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO2 was ∼5.1 eV, compatible with PMOS devices. Post-RuO2 gate annealing up to 800 °C, resulted in only a 1.4 Å equivalent oxide thickness (Tox-eq) change and 0.2 V flatband voltage change for Zr silicate and a 4 Å Tox-eq change for ZrO2 dielectrics. Tantalum electrodes were also studied on ZrO2 as a comparison of the stability of RuO2 electrodes.

Bibliography

Zhong, H., Heuss, G., Misra, V., Luan, H., Lee, C.-H., & Kwong, D.-L. (2001). Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics. Applied Physics Letters, 78(8), 1134â1136.

Authors 6

Huicai Zhong (first)
Greg Heuss (additional)
Veena Misra (additional)
Hongfa Luan (additional)
Choong-Ho Lee (additional)
Dim-Lee Kwong (additional)

References 20 Referenced 56

{'key': '2024020319373954600_r1'}
{'key': '2024020319373954600_r2', 'first-page': '133', 'volume-title': 'Tech. Dig. Int. Electron Devices Meet.', 'year': '1999'} / Tech. Dig. Int. Electron Devices Meet. (1999)
10.1063/1.125673 / Appl. Phys. Lett. (2000)
{'key': '2024020319373954600_r4', 'first-page': '442', 'volume': 'ED-33', 'year': '1986', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1986)
10.1149/1.2095391 / J. Electrochem. Soc. (1988)
10.1149/1.1837530 / J. Electrochem. Soc. (1997)
10.1063/1.98012 / Appl. Phys. Lett. (1987)
10.1016/0040-6090(94)06318-4 / Thin Solid Films (1995)
10.1149/1.2113647 / J. Electrochem. Soc. (1985)
{'key': '2024020319373954600_r10'}
10.1016/0040-6090(91)90312-L / Thin Solid Films (1991)
{'key': '2024020319373954600_r12'}
{'key': '2024020319373954600_r13', 'volume': '130', 'year': '1983', 'journal-title': 'J. Electrochem. Soc.'} / J. Electrochem. Soc. (1983)
10.1063/1.373587 / J. Appl. Phys. (2000)
{'key': '2024020319373954600_r15'}
10.1063/1.341208 / J. Appl. Phys. (1988)
10.1063/1.90154 / Appl. Phys. Lett. (1978)
10.1149/1.2428837 / J. Electrochem. Soc. (1958)
10.1143/JJAP.38.5317 / Jpn. J. Appl. Phys., Part 1 (1999)
10.1116/1.578775 / J. Vac. Sci. Technol. A (1993)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:24 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:39 p.m.)
Indexed	4 months, 2 weeks ago (April 15, 2025, 2:10 a.m.)
Issued	24 years, 6 months ago (Feb. 19, 2001)
Published	24 years, 6 months ago (Feb. 19, 2001)
Published Print	24 years, 6 months ago (Feb. 19, 2001)

Funders 0

None

BibTeX

@article{Zhong_2001, title={Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1347402}, DOI={10.1063/1.1347402}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhong, Huicai and Heuss, Greg and Misra, Veena and Luan, Hongfa and Lee, Choong-Ho and Kwong, Dim-Lee}, year={2001}, month=feb, pages={1134–1136} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        4,
        15
      ]
    ],
    "date-time": "2025-04-15T06:10:52Z",
    "timestamp": 1744697452501
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "8",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2001,
        2,
        19
      ]
    ]
  },
  "abstract": "<jats:p>The rutile stoichiometric phase of RuO2, deposited via reactive sputtering, was evaluated as a gate electrode on chemical vapor deposited ZrO2 and Zr silicate for Si\u2013p-type metal\u2013oxide\u2013semiconductor (PMOS) devices. Thermal and chemical stability of the electrodes was studied at annealing temperatures of 400, 600, and 800\u200a\u00b0C in N2. X-ray diffraction was measured to study grain structure and interface reactions. The resistivity of RuO2 films was 65.0\u2002\u03bc\u03a9\u200acm after 800\u200a\u00b0C annealing. Electrical properties were evaluated on MOS capacitors, which indicated that the work function of RuO2 was \u223c5.1\u200aeV, compatible with PMOS devices. Post-RuO2 gate annealing up to 800\u200a\u00b0C, resulted in only a 1.4 \u00c5 equivalent oxide thickness (Tox-eq) change and 0.2 V flatband voltage change for Zr silicate and a 4\u2002\u00c5\u2002Tox-eq change for ZrO2 dielectrics. Tantalum electrodes were also studied on ZrO2 as a comparison of the stability of RuO2 electrodes.</jats:p>",
  "DOI": "10.1063/1.1347402",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:24:54Z",
    "timestamp": 1027689894000
  },
  "page": "1134-1136",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 56,
  "title": "Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics",
  "prefix": "10.1063",
  "volume": "78",
  "author": [
    {
      "given": "Huicai",
      "family": "Zhong",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina\u200927695"
        }
      ]
    },
    {
      "given": "Greg",
      "family": "Heuss",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina\u200927695"
        }
      ]
    },
    {
      "given": "Veena",
      "family": "Misra",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina\u200927695"
        }
      ]
    },
    {
      "given": "Hongfa",
      "family": "Luan",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, University of Texas, Austin, Texas\u200978712"
        }
      ]
    },
    {
      "given": "Choong-Ho",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, University of Texas, Austin, Texas\u200978712"
        }
      ]
    },
    {
      "given": "Dim-Lee",
      "family": "Kwong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Electrical and Computer Engineering, University of Texas, Austin, Texas\u200978712"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020319373954600_r1"
    },
    {
      "key": "2024020319373954600_r2",
      "first-page": "133",
      "volume-title": "Tech. Dig. Int. Electron Devices Meet.",
      "year": "1999"
    },
    {
      "key": "2024020319373954600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "112",
      "DOI": "10.1063/1.125673",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319373954600_r4",
      "first-page": "442",
      "volume": "ED-33",
      "year": "1986",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020319373954600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "2610",
      "DOI": "10.1149/1.2095391",
      "volume": "135",
      "year": "1988",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319373954600_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1055",
      "DOI": "10.1149/1.1837530",
      "volume": "144",
      "year": "1997",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319373954600_r7",
      "doi-asserted-by": "crossref",
      "first-page": "854",
      "DOI": "10.1063/1.98012",
      "volume": "50",
      "year": "1987",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319373954600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "73",
      "DOI": "10.1016/0040-6090(94)06318-4",
      "volume": "256",
      "year": "1995",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319373954600_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2677",
      "DOI": "10.1149/1.2113647",
      "volume": "132",
      "year": "1985",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319373954600_r10"
    },
    {
      "key": "2024020319373954600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "266",
      "DOI": "10.1016/0040-6090(91)90312-L",
      "volume": "205",
      "year": "1991",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2024020319373954600_r12"
    },
    {
      "key": "2024020319373954600_r13",
      "volume": "130",
      "year": "1983",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319373954600_r14",
      "doi-asserted-by": "crossref",
      "first-page": "8615",
      "DOI": "10.1063/1.373587",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319373954600_r15"
    },
    {
      "key": "2024020319373954600_r16",
      "doi-asserted-by": "crossref",
      "first-page": "4711",
      "DOI": "10.1063/1.341208",
      "volume": "64",
      "year": "1988",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020319373954600_r17",
      "doi-asserted-by": "crossref",
      "first-page": "83",
      "DOI": "10.1063/1.90154",
      "volume": "33",
      "year": "1978",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319373954600_r18",
      "doi-asserted-by": "crossref",
      "first-page": "315",
      "DOI": "10.1149/1.2428837",
      "volume": "105",
      "year": "1958",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319373954600_r19",
      "doi-asserted-by": "crossref",
      "first-page": "5317",
      "DOI": "10.1143/JJAP.38.5317",
      "volume": "38",
      "year": "1999",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020319373954600_r20",
      "doi-asserted-by": "crossref",
      "first-page": "580",
      "DOI": "10.1116/1.578775",
      "volume": "11",
      "year": "1993",
      "journal-title": "J. Vac. Sci. Technol. A"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/8/1134/18555667/1134_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/78/8/1134/18555667/1134_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T19:39:19Z",
    "timestamp": 1706989159000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/78/8/1134/113772/Characterization-of-RuO2-electrodes-on-Zr-silicate"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2001,
        2,
        19
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "8",
    "published-print": {
      "date-parts": [
        [
          2001,
          2,
          19
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1347402",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2001,
        2,
        19
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2001,
        2,
        19
      ]
    ]
  }
}