Abstract
Temperature-dependent photoluminescence measurements were carried out between 8 and 300 K on CuInS2 single crystals grown by a traveling heater method. Ten distinct peaks were present in the near-band edge region. Four unknown peaks, observed at 8 K, were found to be due to bound exciton emission. Moreover, the luminescence remained stable up to room temperature.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:14 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 2:36 p.m.) |
Indexed | 1 year, 1 month ago (July 4, 2024, 4:38 a.m.) |
Issued | 24 years, 6 months ago (Feb. 5, 2001) |
Published | 24 years, 6 months ago (Feb. 5, 2001) |
Published Print | 24 years, 6 months ago (Feb. 5, 2001) |
@article{Yoshino_2001, title={Sharp band edge photoluminescence of high-purity CuInS2 single crystals}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1345802}, DOI={10.1063/1.1345802}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yoshino, Kenji and Ikari, Tetsuo and Shirakata, Sho and Miyake, Hideto and Hiramatsu, Kazumasa}, year={2001}, month=feb, pages={742–744} }