DOI: 10.1063/1.1344913. Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN

Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN

10.1063/1.1344913

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Three infrared-active low-polar modes are reported for highly Si-doped hexagonal (α-) GaN. The 0.8–1.6 μm thick films, grown by metal organic vapor phase epitaxy or molecular beam epitaxy on (0001) sapphire substrates, were studied by infrared spectroscopic ellipsometry. For GaN epilayers with free-electron concentration N⩾8×1018 cm−3 we observe, besides the usual GaN transverse-optical lattice modes and coupled longitudinal-optical phonon-plasmon modes, a band of additional modes at 567.4±2.5, 752.5±0.9, and 855.0±0.9 cm−1. We tentatively assign the first one to the disorder-activated high E2 GaN mode and the third mode to an acoustic-optical combination band, whereas the origin of the second mode remains unclear. Furthermore, the ellipsometric spectra of highly n-conductive Si-doped GaN reveal thin carrier-depleted regions at the sample surface.

Bibliography

Kasic, A., Schubert, M., Kuhn, B., Scholz, F., Einfeldt, S., & Hommel, D. (2001). Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN. Journal of Applied Physics, 89(7), 3720â3724.

Authors 6

A. Kasic (first)
M. Schubert (additional)
B. Kuhn (additional)
F. Scholz (additional)
S. Einfeldt (additional)
D. Hommel (additional)

References 21 Referenced 23

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:16 a.m.)
Deposited	1 year, 6 months ago (Feb. 6, 2024, 7:44 p.m.)
Indexed	1 year, 6 months ago (Feb. 7, 2024, 8:21 p.m.)
Issued	24 years, 5 months ago (April 1, 2001)
Published	24 years, 5 months ago (April 1, 2001)
Published Print	24 years, 5 months ago (April 1, 2001)

Funders 0

None

BibTeX

@article{Kasic_2001, title={Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN}, volume={89}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1344913}, DOI={10.1063/1.1344913}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kasic, A. and Schubert, M. and Kuhn, B. and Scholz, F. and Einfeldt, S. and Hommel, D.}, year={2001}, month=apr, pages={3720–3724} }

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