Abstract
We demonstrate the use of a p-doped amorphous starburst amine, 4, 4′, 4″-tris(N, N-diphenyl- amino)triphenylamine (TDATA), doped with a very strong acceptor, tetrafluoro- tetracyano-quinodimethane by controlled coevaporation as an excellent hole injection material for organic light-emitting diodes (OLEDs). Multilayered OLEDs consisting of double hole transport layers of p-doped TDATA and triphenyl-diamine, and an emitting layer of pure 8-tris-hydroxyquinoline aluminum exhibit a very low operating voltage (3.4 V) for obtaining 100 cd/m2 even for a comparatively large (110 nm) total hole transport layer thickness.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 10:13 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 2:28 p.m.) |
Indexed | 1 month, 3 weeks ago (July 8, 2025, 4:26 p.m.) |
Issued | 24 years, 7 months ago (Jan. 22, 2001) |
Published | 24 years, 7 months ago (Jan. 22, 2001) |
Published Print | 24 years, 7 months ago (Jan. 22, 2001) |
@article{Zhou_2001, title={Very-low-operating-voltage organic light-emitting diodes using a p-doped amorphous hole injection layer}, volume={78}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1343849}, DOI={10.1063/1.1343849}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhou, X. and Pfeiffer, M. and Blochwitz, J. and Werner, A. and Nollau, A. and Fritz, T. and Leo, K.}, year={2001}, month=jan, pages={410–412} }