DOI: 10.1063/1.1329863. Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

10.1063/1.1329863

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Large-scale wurtzite GaN nanowires and nanotubes were grown by direct reaction of metal gallium vapor with flowing ammonia in an 850–900 °C horizontal oven. The cylindrical structures were as long as 500 μm with diameters between 26 and ∼100 nm. Transmission electron microscopy, scanning electron microscopy, and x-ray diffraction were used to measure the size and structures of the samples. Preliminary results show that the size of the nanowires depends on the temperature and the NH3 flow rate. The growth mechanism is discussed briefly. The simple method presented here demonstrates that GaN nanowires can be grown without the use of a template or catalyst, as reported elsewhere.

Bibliography

He, M., Minus, I., Zhou, P., Mohammed, S. N., Halpern, J. B., Jacobs, R., Sarney, W. L., Salamanca-Riba, L., & Vispute, R. D. (2000). Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3. Applied Physics Letters, 77(23), 3731â3733.

Authors 9

Maoqi He (first)
Indira Minus (additional)
Piezhen Zhou (additional)
S. Noor Mohammed (additional)
Joshua B. Halpern (additional)
Randy Jacobs (additional)
Wendy L. Sarney (additional)
Lourdes Salamanca-Riba (additional)
R. D. Vispute (additional)

References 15 Referenced 184

10.1016/S0079-6727(96)00002-X / Prog. Quantum Electron. (1996)
10.1126/science.267.5194.51 / Science (1995)
10.1126/science.272.5269.1751 / Science (1996)
10.1038/386351a0 / Nature (London) (1997)
10.1103/PhysRevB.60.7788 / Phys. Rev. B (1999)
10.1126/science.277.5330.1287 / Science (1997)
10.1063/1.125848 / Appl. Phys. Lett. (2000)
10.1021/ja993713u / J. Am. Chem. Soc. (2000)
10.1002/(SICI)1521-4095(200005)12:10<738::AID-ADMA738>3.0.CO;2-J / Adv. Mater. (2000)
10.1016/S0022-0248(00)00390-0 / J. Cryst. Growth (2000)
10.1063/1.125046 / Appl. Phys. Lett. (1999)
10.1143/JJAP.36.L459 / Jpn. J. Appl. Phys., Part 2 (1997)
10.1149/1.2404088 / J. Electrochem. Soc. (1972)
{'key': '2024020319141524200_r12', 'first-page': '621', 'volume': '32', 'year': '1998', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. (1998)
10.1016/0022-0248(84)90075-7 / J. Cryst. Growth (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 10:14 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:14 p.m.)
Indexed	1 year, 1 month ago (July 5, 2024, 5:23 p.m.)
Issued	24 years, 8 months ago (Dec. 4, 2000)
Published	24 years, 8 months ago (Dec. 4, 2000)
Published Print	24 years, 8 months ago (Dec. 4, 2000)

Funders 0

None

BibTeX

@article{He_2000, title={Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1329863}, DOI={10.1063/1.1329863}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={He, Maoqi and Minus, Indira and Zhou, Piezhen and Mohammed, S. Noor and Halpern, Joshua B. and Jacobs, Randy and Sarney, Wendy L. and Salamanca-Riba, Lourdes and Vispute, R. D.}, year={2000}, month=dec, pages={3731–3733} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        7,
        5
      ]
    ],
    "date-time": "2024-07-05T21:23:09Z",
    "timestamp": 1720214589636
  },
  "reference-count": 15,
  "publisher": "AIP Publishing",
  "issue": "23",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2000,
        12,
        4
      ]
    ]
  },
  "abstract": "<jats:p>Large-scale wurtzite GaN nanowires and nanotubes were grown by direct reaction of metal gallium vapor with flowing ammonia in an 850\u2013900\u2009\u00b0C horizontal oven. The cylindrical structures were as long as 500 \u03bcm with diameters between 26 and \u223c100 nm. Transmission electron microscopy, scanning electron microscopy, and x-ray diffraction were used to measure the size and structures of the samples. Preliminary results show that the size of the nanowires depends on the temperature and the NH3 flow rate. The growth mechanism is discussed briefly. The simple method presented here demonstrates that GaN nanowires can be grown without the use of a template or catalyst, as reported elsewhere.</jats:p>",
  "DOI": "10.1063/1.1329863",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T14:14:52Z",
    "timestamp": 1027692892000
  },
  "page": "3731-3733",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 184,
  "title": "Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3",
  "prefix": "10.1063",
  "volume": "77",
  "author": [
    {
      "given": "Maoqi",
      "family": "He",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Materials Science Research Center of Excellence, Howard University, Washington, DC\u200920059"
        }
      ]
    },
    {
      "given": "Indira",
      "family": "Minus",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Science Research Center of Excellence, Howard University, Washington, DC\u200920059"
        }
      ]
    },
    {
      "given": "Piezhen",
      "family": "Zhou",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Science Research Center of Excellence, Howard University, Washington, DC\u200920059"
        }
      ]
    },
    {
      "given": "S. Noor",
      "family": "Mohammed",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Science Research Center of Excellence, Howard University, Washington, DC\u200920059"
        }
      ]
    },
    {
      "given": "Joshua B.",
      "family": "Halpern",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Materials Science Research Center of Excellence, Howard University, Washington, DC\u200920059"
        }
      ]
    },
    {
      "given": "Randy",
      "family": "Jacobs",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland\u200920742"
        }
      ]
    },
    {
      "given": "Wendy L.",
      "family": "Sarney",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland\u200920742"
        }
      ]
    },
    {
      "given": "Lourdes",
      "family": "Salamanca-Riba",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland\u200920742"
        }
      ]
    },
    {
      "given": "R. D.",
      "family": "Vispute",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics, University of Maryland, College Park, Maryland\u200920742"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020319141524200_r1",
      "doi-asserted-by": "crossref",
      "first-page": "361",
      "DOI": "10.1016/S0079-6727(96)00002-X",
      "volume": "20",
      "year": "1996",
      "journal-title": "Prog. Quantum Electron."
    },
    {
      "key": "2024020319141524200_r2",
      "doi-asserted-by": "crossref",
      "first-page": "51",
      "DOI": "10.1126/science.267.5194.51",
      "volume": "267",
      "year": "1995",
      "journal-title": "Science"
    },
    {
      "key": "2024020319141524200_r2a",
      "doi-asserted-by": "crossref",
      "first-page": "1751",
      "DOI": "10.1126/science.272.5269.1751",
      "volume": "272",
      "year": "1996",
      "journal-title": "Science"
    },
    {
      "key": "2024020319141524200_r2b",
      "doi-asserted-by": "crossref",
      "first-page": "351",
      "DOI": "10.1038/386351a0",
      "volume": "386",
      "year": "1997",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2024020319141524200_r3",
      "doi-asserted-by": "crossref",
      "first-page": "7788",
      "DOI": "10.1103/PhysRevB.60.7788",
      "volume": "60",
      "year": "1999",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020319141524200_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1287",
      "DOI": "10.1126/science.277.5330.1287",
      "volume": "277",
      "year": "1997",
      "journal-title": "Science"
    },
    {
      "key": "2024020319141524200_r5",
      "doi-asserted-by": "crossref",
      "first-page": "652",
      "DOI": "10.1063/1.125848",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319141524200_r6",
      "doi-asserted-by": "crossref",
      "first-page": "188",
      "DOI": "10.1021/ja993713u",
      "volume": "122",
      "year": "2000",
      "journal-title": "J. Am. Chem. Soc."
    },
    {
      "key": "2024020319141524200_r7",
      "doi-asserted-by": "crossref",
      "first-page": "738",
      "DOI": "10.1002/(SICI)1521-4095(200005)12:10<738::AID-ADMA738>3.0.CO;2-J",
      "volume": "12",
      "year": "2000",
      "journal-title": "Adv. Mater."
    },
    {
      "key": "2024020319141524200_r8",
      "doi-asserted-by": "crossref",
      "first-page": "408",
      "DOI": "10.1016/S0022-0248(00)00390-0",
      "volume": "213",
      "year": "2000",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2024020319141524200_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2455",
      "DOI": "10.1063/1.125046",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020319141524200_r10",
      "doi-asserted-by": "crossref",
      "first-page": "L459",
      "DOI": "10.1143/JJAP.36.L459",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2024020319141524200_r11",
      "doi-asserted-by": "crossref",
      "first-page": "1727",
      "DOI": "10.1149/1.2404088",
      "volume": "119",
      "year": "1972",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020319141524200_r12",
      "first-page": "621",
      "volume": "32",
      "year": "1998",
      "journal-title": "J. Korean Phys. Soc."
    },
    {
      "key": "2024020319141524200_r13",
      "doi-asserted-by": "crossref",
      "first-page": "45",
      "DOI": "10.1016/0022-0248(84)90075-7",
      "volume": "66",
      "year": "1984",
      "journal-title": "J. Cryst. Growth"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/77/23/3731/18554082/3731_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/77/23/3731/18554082/3731_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T19:14:28Z",
    "timestamp": 1706987668000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/77/23/3731/113956/Growth-of-large-scale-GaN-nanowires-and-tubes-by"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2000,
        12,
        4
      ]
    ]
  },
  "references-count": 15,
  "journal-issue": {
    "issue": "23",
    "published-print": {
      "date-parts": [
        [
          2000,
          12,
          4
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1329863",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2000,
        12,
        4
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2000,
        12,
        4
      ]
    ]
  }
}