DOI: 10.1063/1.1325394. Low-dislocation-density GaN from a single growth on a textured substrate

Low-dislocation-density GaN from a single growth on a textured substrate

10.1063/1.1325394

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The density of threading dislocations (TD) in GaN grown directly on flat sapphire substrates is typically greater than 109/cm2. The density of dislocations can be decreased by orders of magnitude using cantilever epitaxy, which employs pre-patterned sapphire substrates to provide reduced-dimension mesa regions for nucleation and etched trenches between them for suspended lateral growth of GaN or AlGaN. The substrate is pre-patterned with narrow lines and etched to a depth that permits coalescence of laterally growing III–N nucleated on the mesa surfaces before vertical growth fills the etched trench. Low-dislocation densities typical of epitaxial lateral overgrowth are obtained in the cantilever regions and the TD density is also reduced up to 1 μm from the edge of the support regions.

Bibliography

Ashby, C. I. H., Mitchell, C. C., Han, J., Missert, N. A., Provencio, P. P., Follstaedt, D. M., Peake, G. M., & Griego, L. (2000). Low-dislocation-density GaN from a single growth on a textured substrate. Applied Physics Letters, 77(20), 3233â3235.

Authors 8

Carol I. H. Ashby (first)
Christine C. Mitchell (additional)
Jung Han (additional)
Nancy A. Missert (additional)
Paula P. Provencio (additional)
David M. Follstaedt (additional)
Gregory M. Peake (additional)
Leonardo Griego (additional)

References 15 Referenced 159

{'key': '2024020319074793500_r1', 'first-page': '24', 'volume': '273–274', 'year': '1999', 'journal-title': 'Physica B'} / Physica B (1999)
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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:41 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 2:07 p.m.)
Indexed	4 months, 1 week ago (April 20, 2025, 12:29 a.m.)
Issued	24 years, 9 months ago (Nov. 13, 2000)
Published	24 years, 9 months ago (Nov. 13, 2000)
Published Print	24 years, 9 months ago (Nov. 13, 2000)

Funders 0

None

BibTeX

@article{Ashby_2000, title={Low-dislocation-density GaN from a single growth on a textured substrate}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1325394}, DOI={10.1063/1.1325394}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ashby, Carol I. H. and Mitchell, Christine C. and Han, Jung and Missert, Nancy A. and Provencio, Paula P. and Follstaedt, David M. and Peake, Gregory M. and Griego, Leonardo}, year={2000}, month=nov, pages={3233–3235} }

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